2SD965A

2SD965A Elektronische Bauelemente 5 A, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 4 1 A E FEATURES  Audio amplifier  Flasg unit of camera  Switching circuit 2 3 C BC E D CLASSIFICATION OF hFE(2) Rank Range Q 230 - 380 B R 340 - 600 S 560 - 800 F G H J K L REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 40 30 7 5 750 150, -55~150 UNIT V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) fT COB MIN. 40 30 7 230 150 - TYP. 200 150 - MAX. 0.1 0.1 800 1 50 UNIT V V V μA μA TEST CONDITIONS IC=0.1mA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=10V, IE=0 VEB=7 V, IC=0 VCE=2V, IC= 1mA VCE=2V, IC= 500mA VCE=2V, IC= 2A IC=3A, IB= 0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz V MHz pF http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Nov-2010 Rev. A Page 1 of 2 2SD965A Elektronische Bauelemente 5 A, 40 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Nov-2010 Rev. A Page 2 of 2