CJA9451

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low on- resistance and cost-effectiveness. SOT-89-3L 1. GATE 2. DRAIN 3. SOURCE 1 22 3 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Units Drain-Source Voltage VDS -20 Continuous Gate-Source Voltage VGS ±12 Continuous Drain Current ID -2.3 A Power Dissipation PD 0.5 W RθJA 250 ℃/W Tj 150 Tstg -55 ~+150 Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature V ℃ B,Aug,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit̀ Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA -20 V Gate-body leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1.0 µA -1.50 V On characteristics Gate-threshold voltage VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gfs VDS =VGS, ID =-0.25mA -0.50 VGS =-4.5V, ID =-2.3A 0.135 VGS =-2.5V, ID =-1.0A 0.240 VDS =-5V, ID =-2.3A Ω 2.3 S Dynamic characteristics (note 2) Input capacitance Ciss 430 Output capacitance Coss Reverse transfer capacitance Crss 35 td(on) 9 VDS =-20V,VGS =0V, f=1MHz pF 100 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 2) Turn-off delay time (note 2) Fall time (note 2) tr td(off) VGS=-5V, VDS=-10V, ID =-1A,RG=3.3Ω, RD=10Ω tf 25 ns 20 10 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=-1A, VGS = 0V -1.6 No tes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. B,Aug,2011 V CJA9451 Typical Characteristics Output Characteristics Transfer Characteristics -20 -20 Ta=25℃ Pulsed VGS=-4.5V -4V -3.5V -3V Ta=25℃ Pulsed -2.5V ID DRAIN CURRENT DRAIN CURRENT ID (A) -15 (A) -15 VDS=-5V -2V -10 -5 VGS=-1.5V -0 -10 -5 -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE -4 VDS -5 -0 (V) -1 -2 -3 GATE TO SOURCE VOLTAGE VGS -4 (V) RDS(ON) —— VGS RDS(ON) —— ID 240 240 Ta=25℃ Pulsed Ta=25℃ Pulsed 200 (m) (m) 200 VGS=-4.5V 80 160 RDS(ON) VGS=-2.5V 120 ON-RESISTANCE ON-RESISTANCE RDS(ON) 160 40 120 ID=-2.3A 80 40 0 0 -0 -2 -4 -6 DRAIN CURRENT ID -8 -10 (A) -0 -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) IS —— VSD -1 SOURCE CURRENT IS (A) Ta=25℃ Pulsed -0.1 -0.01 -1E-3 -0.2 -0.4 -0.6 SOURCE TO DRAIN VOLTAGE -0.8 -1.0 VSD (V) B,Aug,2011