CJL2623

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETs CJL2623 Dual P-Channel MOSFET SOT-23-6L V(BR)DSS ID RDS(on)MAX  130mΩ@-10V  -30 V -3A 180mΩ@-4.5V FEATURE z TrenchFET Power MOSFET z Low Gate Charge z Low On-resistance z Surface Mount Package APPLICATION z DC/DC converter z Load switch for portable devices z Commercial-industrial applications Equivalent Circuit MARKING: 6   1 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -3 A Pulsed Drain Current (note 1) IDM -20 A Power Dissipation (note 2) PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ Thermal Resistance from Junction to Ambient Notes : 1. Pulse width limited by Max.junction temperature. 2.Per element must not be exceeded www.cj-elec.com 1 C,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -3 V Drain-source on-resistance (note 3) RDS(on) VGS =-10V, ID =-3A 130 mΩ VGS =-4.5V, ID =-2A 180 mΩ Forward tranconductance gFS VDS =-5V, ID =-2A Diode forward voltage (note 3) VSD IS=-1A, VGS = 0V -30 V -1 2 S -1.2 V 240 pF DYNAMIC PARAMETERS(note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 42 pF Crss 32 pF td(on) 5 ns VDD=-15V,VGS=-10V,ID=-1A 6 ns RD=15Ω,RG=3.3Ω 15 ns 3 ns VDS =-25V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 3,4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Notes : 4.5 VDS =-24V,VGS =-4.5V,ID=-2A nC 0.5 nC 1.4 nC 3. Pulse Test : Pulse width≤300μs, duty cycle≤2%. 4. Graranted by design，not subject to production testing. www.cj-elec.com 2 C,May,2015 Typical Characteristics Output Characteristics Transfer Characteristics -20 -12 VDS=-3.0V -18 Pulsed VGS=-6V -10 ID VGS=-4.5V -10 VGS=-4V -8 VGS=-3.5V -6 VGS=-3V -4 Ta=25℃ Ta=100℃ -3 -5 (A) VGS=-5V DRAIN CURRENT (A) -12 DRAIN CURRENT -14 ID -16 -8 -6 -4 -2 -2 -0 -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -4 -0 ID RDS(ON) Pulsed (mΩ) 120 RDS(ON) VGS=-4.5V 100 ON-RESISTANCE (mΩ) —— -7 VGS -8 -9 -10 -9 -10 (V) VGS 700 130 RDS(ON) -6 Ta=25℃ 140 ON-RESISTANCE -4 800 150 90 -2 GATE TO SOURCE VOLTAGE 160 110 -1 (V) 80 70 VGS=-10V 60 50 40 600 ID=-2A 500 400 300 Ta=100℃ 200 Pulsed Ta=25℃ 100 Pulsed 30 20 0 -0 -1 -2 -3 DRAIN CURRENT IS —— ID -4 -5 -0 -1 -2 -3 -4 -5 -6 GATE TO SOURCE VOLTAGE (A) VSD -7 VGS -8 (V) Threshold Voltage -5 -1.8 (V) VTH -1 Ta=100℃ Pulsed -0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) -1.7 Ta=25℃ Pulsed -1.6 ID=-250uA -1.5 -1.4 -1.3 -0.01 -0.0 -0.4 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.2 VSD -1.2 25 -1.6 50 75 JUNCTION TEMPERATURE (V) 3 100 TJ 125 (℃ ) C,May,2015 SOT-23-6L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-6L Suggested Pad Layout www.cj-elec.com 4 C,May,2015 SOT-23-6L Tape and Reel www.cj-elec.com 5 C,May,2015