JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882
TRANSISTOR (NPN)
TO-126
FEATURES
Power Dissipation
1. EMITTER
2. COLLECTOR
3. BASE
Equivalent Circuit
D882 'HYLFHFoGH
Solid dot = Green molding compound
device, if none, the normal device
;; &ode
D882
zXX
ORDERING INFORMATION
Package
Packing Method
Pack Quantity
D882
TO-126
Bulk
200pcs/Bag
D882-TU
TO-126
Tube
60pcs/Tube
Part Number
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
3
A
PC
Collector Power Dissipation
1.25
W
-55-150
℃
TJ,Tstg
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Operation Junction and Storage Temperature Range
1
Rev. - 2.0
Ta =25 Я unless otherwise specified
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC = 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 40 V, IE=0
1
µA
Collector cut-off current
ICEO
VCE= 30 V, IB=0
10
µA
Emitter cut-off current
IEBO
VEB= 6 V, IC=0
1
µA
DC current gain
hFE
VCE= 2 V, IC= 1A
60
400
Collector-emitter saturation voltage
VCE (sat)
IC= 2A, IB= 0.2 A
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC= 2A, IB= 0.2 A
1.5
V
fT
Transition frequency
VCE= 5V, IC=0.1A
90
f =10MHz
MHz
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
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2
Rev. - 2.0
Typical Characteristics
IC
2.5
VCE
——
COMMON
EMITTER
Ta=25 ℃
IC
Ta=100℃
7mA
IC
——
hFE
8mA
2.0
DC CURRENT GAIN
(A)
10mA
9mA
COLLECTOR CURRENT
hFE
1000
6mA
1.5
5mA
4mA
1.0
3mA
Ta=25℃
100
2mA
0.5
COMMON EMITTER
VCE= 2V
IB=1mA
0.0
10
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
——
8
9
1
VCE (V)
IC
100
VBEsat ——
2000
100
Ta=100 ℃
10
10
1000
COLLECTOR CURRENT
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
VCEsat
1000
7
Ta=25℃
IC
IC
1000
Ta=25℃
Ta=100 ℃
β=10
β=10
1
100
1
10
100
COLLECTOR CURREMT
IC
3000
——
1000
IC
1
3000
10
100
COLLECTOR CURREMT
(mA)
Cob/Cib
VBE
——
1000
IC
3000
(mA)
VCB/VEB
500
f=1MHz
IE=0/IC=0
1000
Cib
(pF)
(mA)
Ta=25 ℃
100
CAPACITANCE
100
T=
a 25
℃
T=
a 10
0℃
C
IC
COLLECTOR CURRENT
3000
(mA)
10
Cob
COMMON EMITTER
VCE= 2V
10
0.1
1
0
300
600
900
1200
PC
COLLECTOR POWER DISSIPATION
PC (mW)
1400
——
1
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
10
V
20
(V)
Ta
1200
1000
800
600
400
200
0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
150
(℃ )
3
Rev. - 2.0
TO-126 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
e
e1
h
L
L1
P
Φ
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Dimensions In Millimeters
Min
Max
2.900
2.500
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290 TYP
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
4
Dimensions In Inches
Min
Max
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
0.090 TYP
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
Rev. - 2.0
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