D882S-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)  FEATURES 1.EMITTER Power dissipation 2.COLLECTOR 3.BASE  3 +55 4 z Equivalent Circuit !'&&  !"#$%$&%$'&(   $$(+$#%'& )!*$ +,( ---!. 1  +* /  & $% &01- &01- ! &01 2#  TO-92 Bulk 1000pcs/Bag   Tape 2000pcs/Box        !" '  Collector-Base Voltage 40 V '(* Collector-Emitter Voltage 30 V '*) Emitter-Base Voltage 6 V ( Collector Current -Continuous 3 A #$% '() &+  ș . TJ,- www.jscj-elec.com &$ 625 mW  Thermal Resistance rom Junction o Ambient  Collector Power Dissipation  /W Operation Junction and Storage Temperature Range 1 -55   Rev. - 2.0 *6*(( 6 (7  (*( Ta =25  unless otherwise specified Parameter Symbol Test conditions M T#: ;  Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V Collector cut-off current ICBO VCB= 40V, IE=0 1 μA Collector cut-off current ICEO VCE= 30V, IB=0 10 μA Emitter cut-off current IEBO VEB= 6V, IC=0 1 μA DC current gain hFE VCE=2V, IC= 1A Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V fT Transition frequency VCE= 5V , f =10MHz Ic=0.1A 60 400 50  MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic 1.8 COMMON EMITTER Ta=25ć 1.4 4.4mA 3.85mA 1.0 3.3mA 0.8 2.75mA 2.2mA 0.6 IC 500 4.95mA 1.2 —— COMMON EMITTER VCE= 2V 5.5mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) 1.6 Ta=100ć 400 300 Ta=25ć 200 1.65mA 0.4 1.1mA 0.2 100 IB=0.55mA 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 COLLECTOR-EMITTER VOLTAGE —— VCE 0 10 4.0 IC 1000 VBEsat 2000 100 Ta=100 ć Ta=25ć 10 100 COLLECTOR CURRENT (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) hFE 600 —— IC 3000 (mA) IC Ta=25ć 1000 Ta=100 ć =10 =10 1 10 100 1000 COLLECTOR CURREMT IC —— 100 COLLECTOR CURREMT (mA) Cob/Cib VBE —— CAPACITANCE C (pF) T= a 25 ć 10 0 300 600 900 100 VCB/VEB f=1MHz IE=0/IC=0 1 —— IC PC 750 COLLECTOR POWER DISSIPATION PC (mW) fT 10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 500 Ta=25 ć Cob 10 0.1 1200 100 10 VCE=5V 3000 (mA) Cib 100 1 IC 500 COMMON EMITTER VCE= 2V TRANSITION FREQUENCY fT (MHz) 1000 1000 T= a 1 00 ć COLLECTOR CURRENT IC (mA) 3000 IC 100 10 3000 —— V 20 (V) Ta 625 500 375 250 125 o Ta=25 C 1 5 10 www.jscj-elec.com 0 100 COLLECTOR CURRENT IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta 125 150 (ć ) Rev. - 2.0  &01-  +$ #$% A A1 b c D D1 E e e1 L  h +$  $ +$  0  ;  ; 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4./ 4.700 01 0 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015  --! &! 6# NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0