PBSS5160T,215

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.2 Features „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency due to less heat generation Reduces Printed-Circuit Board (PCB) area required Cost-effective replacement for medium power transistors BCP52 and BCX52 1.3 Applications „ Major application segments: ‹ Automotive ‹ Telecom infrastructure ‹ Industrial „ Power management: ‹ DC-to-DC conversion ‹ Supply line switching „ Peripheral driver: ‹ Driver in low supply voltage applications (e.g. lamps and LEDs) ‹ Inductive load drivers (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - −60 V - - −1 A - - −2 A - 220 330 mΩ VCEO collector-emitter voltage IC collector current ICM peak collector current t = 1 ms or limited by Tj(max) RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 006aab259 3. Ordering information Table 3. Ordering information Type number PBSS5160T Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS5160T *U6 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCBO Min Max Unit collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector - −5 V IC collector current [1] - −0.9 A [2] - −1 A - −2 A - −300 mA - −1 A ICM peak collector current IB base current IBM peak base current Conditions t = 1 ms or limited by Tj(max) tp ≤ 300 μs; δ ≤ 0.02 PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 2 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Ptot total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 270 mW [2] - 400 mW [1][3] - 1.25 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms. mle128 500 Ptot (mW) 400 (1) 300 (2) 200 100 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 3 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 465 K/W [2] - - 312 K/W [1][3] - - 100 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms. mle127 103 Zth (K/W) 102 δ=1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Transient thermal impedance as a function of pulse duration; typical values PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 4 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions collector-base cut-off VCB = −60 V; IE = 0 A current VCB = −60 V; IE = 0 A; Tj = 150 °C Min Typ Max Unit - - −100 nA - −50 μA ICES collector-emitter cut-off current VCE = −60 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −5 V IC = −1 mA VCEsat collector-emitter saturation voltage 200 350 - IC = −500 mA [1] 150 250 - IC = −1 A [1] 100 160 - IC = −100 mA; IB = −1 mA - −110 −160 mV IC = −500 mA; IB = −50 mA - −120 −175 mV IC = −1 A; IB = −100 mA [1] - −220 −330 mV RCEsat collector-emitter IC = −1 A; IB = −100 mA saturation resistance [1] - 220 330 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA - −0.95 −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A - −0.82 −0.9 V fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 150 220 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 9 15 pF [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 5 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor mle124 600 hFE −2 IC IB (mA) = − 20 −24 −28 −32 −36 −40 (A) mle125 −1.6 (1) −16 400 −12 −1.2 (2) −8 −0.8 200 −4 (3) −0.4 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −5 V −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. DC current gain as a function of collector current; typical values mle122 −1.2 Fig 4. Collector current as a function of collector-emitter voltage; typical values mle123 −1.2 VBEsat (V) VBE (V) −1 (1) −0.8 (1) (2) (2) −0.8 (3) (3) −0.6 −0.4 −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 VCE = −5 V −1 −103 −104 IC (mA) −102 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 5. −10 Base-emitter voltage as a function of collector current; typical values Fig 6. Base-emitter saturation voltage as a function of collector current; typical values PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 6 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor mle126 −10 VCEsat mle119 −1 VCEsat (V) (V) −10−1 −1 (2) −10−1 −10−2 (1) (3) (2) (1) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 IC/IB = 20 IC/IB = 10 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. −10 −103 −104 IC (mA) −102 (3) Tamb = −55 °C Collector-emitter saturation voltage as a function of collector current; typical values mle120 −10 Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values mle121 103 RCEsat (Ω) VCEsat (V) 102 −1 10 −10−1 (1) 1 (1) (2) (2) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C (3) 10−1 −10−1 −1 −10 −103 −104 IC (mA) −102 IC/IB = 20 (1) IC/IB = 100 (1) Tamb = 100 °C (2) IC/IB = 50 (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 7 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS5160T [1] Package Description SOT23 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 12. PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 8 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5160T_4 20100115 Product data sheet - PBSS5160T_N_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate. Table 1 “Quick reference data”: amended Section 4 “Marking”: amended Figure 4: updated Figure 11: superseded by minimized package outline drawing Section 9 “Packing information”: added Section 11 “Legal information”: updated PBSS5160T_N_3 20080718 Product data sheet - PBSS5160T_2 PBSS5160T_2 20040527 Product specification - PBSS5160T_1 PBSS5160T_1 20030623 Product specification - - PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 9 of 11 © Nexperia B.V. 2017. All rights reserved PBSS5160T Nexperia 60 V, 1 A PNP low VCEsat (BISS) transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PBSS5160T_4 Product data sheet Rev. 04 — 15 January 2010 10 of 11 © Nexperia B.V. 2017. All rights reserved Nexperia PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 15 January 2010