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PMEG4005EH,115

PMEG4005EH,115

  • 厂商:

    RUBYCON(红宝石)

  • 封装:

    SOD123

  • 描述:

    直流反向耐压(Vr):40V;平均整流电流(Io):500mA;正向压降(Vf):470mV@500mA;

  • 数据手册
  • 价格&库存
PMEG4005EH,115 数据手册
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMEGxx05EH/EJ series 0.5 A very low VF MEGA Schottky barrier rectifiers Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SMD package. Table 1. Product overview Type number PMEG2005EH Package Configuration NXP JEITA SOD123F - single diode SOD323F SC-90 single diode PMEG3005EH PMEG4005EH PMEG2005EJ PMEG3005EJ PMEG4005EJ 1.2 Features „ Forward current: 0.5 A „ Very low forward voltage „ Flat lead SMD package 1.3 Applications „ „ „ „ „ Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applications PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tsp ≤ 55 °C - - 0.5 A VR reverse voltage PMEG2005EH, PMEG2005EJ - - 20 V PMEG3005EH, PMEG3005EJ - - 30 V PMEG4005EH, PMEG4005EJ - - 40 V PMEG2005EH, PMEG2005EJ - 355 390 mV PMEG3005EH, PMEG3005EJ - 380 430 mV PMEG4005EH, PMEG4005EJ - 420 470 mV forward voltage VF [1] [1] IF = 500 mA Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2. Pinning information Table 3. Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 2 1 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Ordering information Type number PMEG2005EH Package Name Description Version - plastic surface mounted package; 2 leads SOD123F SC-90 plastic surface mounted package; 2 leads SOD323F PMEG3005EH PMEG4005EH PMEG2005EJ PMEG3005EJ PMEG4005EJ PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 2 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 4. Marking Table 5. Marking codes Type number Marking code PMEG2005EH A3 PMEG3005EH A4 PMEG4005EH A5 PMEG2005EJ CC PMEG3005EJ CD PMEG4005EJ CE 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PMEG2005EH, PMEG2005EJ - 20 V PMEG3005EH, PMEG3005EJ - 30 V PMEG4005EH, PMEG4005EJ - 40 V - 0.5 A reverse voltage VR Tsp ≤ 55 °C IF forward current IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 7 A IFSM non-repetitive peak forward current t = 8 ms square wave - 10 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 375 mW [2] - 830 mW [1] - 360 mW [2] - 830 mW SOD123F SOD323F Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 3 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter Conditions Min Typ Max Unit SOD123F - - 330 K/W SOD323F - - 350 K/W - - 150 K/W SOD123F - - 60 K/W SOD323F - - 55 K/W thermal resistance from junction in free air to ambient [1][2] [1][3] Rth(j-sp) thermal resistance from junction to solder point [1] Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 4 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF Parameter Conditions forward voltage PMEG2005EH, PMEG2005EJ PMEG3005EH, PMEG3005EJ PMEG4005EH, PMEG4005EJ PMEG3005EH, PMEG3005EJ - 90 130 mV - 150 190 mV IF = 10 mA - 210 240 mV IF = 100 mA - 280 330 mV IF = 500 mA - 355 390 mV IF = 0.1 mA - 90 130 mV IF = 1 mA - 150 200 mV IF = 10 mA - 215 250 mV IF = 100 mA - 285 340 mV IF = 500 mA - 380 430 mV IF = 0.1 mA - 95 130 mV IF = 1 mA - 155 210 mV IF = 10 mA - 220 270 mV IF = 100 mA - 295 350 mV - 420 470 mV [1][2] VR = 10 V - 15 40 μA VR = 20 V - 40 200 μA VR = 10 V - 12 30 μA VR = 30 V - 40 150 μA VR = 10 V - 7 20 μA - 30 100 μA PMEG2005EH, PMEG2005EJ - 66 80 pF PMEG3005EH, PMEG3005EJ - 55 70 pF PMEG4005EH, PMEG4005EJ - 43 50 pF diode capacitance VR = 1 V; f = 1 MHz [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Schottky barrier rectifier thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. PMEGXX05EH_EJ_SER_2 Product data sheet Unit VR = 40 V PMEG4005EH, PMEG4005EJ Cd Max IF = 0.1 mA reverse current PMEG2005EH, PMEG2005EJ Typ IF = 1 mA IF = 500 mA IR Min [1] © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 5 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 006aaa247 103 IR (μA) IF (mA) 102 006aaa248 105 (1) 104 (2) 103 (1) 10 (2) (3) (4) (3) 102 (5) (4) 10 1 1 10−1 10−1 (5) 10−2 10−3 10−2 0 0.1 0.2 0.3 0.4 0 0.5 4 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 125 °C (2) Tamb = 125 °C (3) Tamb = 85 °C (3) Tamb = 85 °C (4) Tamb = 25 °C (4) Tamb = 25 °C (5) Tamb = −40 °C (5) Tamb = −40 °C Fig 1. 8 12 16 20 VR (V) VF (V) PMEG2005EH, PMEG2005EJ: Forward current as a function of forward voltage; typical values Fig 2. PMEG2005EH, PMEG2005EJ: Reverse current as a function of reverse voltage; typical values 006aaa249 120 Cd (pF) 80 40 0 0 4 8 12 16 20 VR (V) Tamb = 25 °C; f = 1 MHz Fig 3. PMEG2005EH, PMEG2005EJ: Diode capacitance as a function of reverse voltage; typical values PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 6 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 006aaa250 103 IR (μA) IF (mA) 102 (1) 10 (2) (3) (4) 006aaa251 105 (1) 104 (2) 103 (3) 102 (5) (4) 10 1 1 10−1 10−1 (5) 10−2 10−3 10−2 0 0.1 0.2 0.3 0.4 0 0.5 10 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 125 °C (2) Tamb = 125 °C (3) Tamb = 85 °C (3) Tamb = 85 °C (4) Tamb = 25 °C (4) Tamb = 25 °C (5) Tamb = −40 °C (5) Tamb = −40 °C Fig 4. 20 30 VR (V) VF (V) PMEG3005EH, PMEG3005EJ: Forward current as a function of forward voltage; typical values Fig 5. PMEG3005EH, PMEG3005EJ: Reverse current as a function of reverse voltage; typical values 006aaa252 120 Cd (pF) 80 40 0 0 10 20 30 VR (V) Tamb = 25 °C; f = 1 MHz Fig 6. PMEG3005EH, PMEG3005EJ: Diode capacitance as a function of reverse voltage; typical values PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 7 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 006aaa253 103 IF (mA) IR (μA) 006aaa254 105 (1) 104 (2) 103 (3) 102 (1) 10 (2) (3) (4) 102 (5) (4) 10 1 1 10−1 10−1 (5) 10−2 10−3 10−2 0 0.1 0.2 0.3 0.4 0.5 0.6 VF (V) 0 10 30 40 VR (V) (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 125 °C (2) Tamb = 125 °C (3) Tamb = 85 °C (3) Tamb = 85 °C (4) Tamb = 25 °C (4) Tamb = 25 °C (5) Tamb = −40 °C (5) Tamb = −40 °C Fig 7. 20 PMEG4005EH, PMEG4005EJ: Forward current as a function of forward voltage; typical values Fig 8. PMEG4005EH, PMEG4005EJ: Reverse current as a function of reverse voltage; typical values 006aaa255 100 Cd (pF) 80 60 40 20 0 0 10 20 30 40 VR (V) Tamb = 25 °C; f = 1 MHz Fig 9. PMEG4005EH, PMEG4005EJ: Diode capacitance as a function of reverse voltage; typical values PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 8 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 8. Package outline 1.7 1.5 1.2 1.0 1.35 1.15 1 0.80 0.65 0.5 0.3 1 0.55 0.35 3.6 3.4 2.7 2.3 2.7 2.5 1.8 1.6 2 2 0.70 0.55 Dimensions in mm 0.25 0.10 0.40 0.25 0.25 0.10 04-11-29 Fig 10. Package outline SOD123F Dimensions in mm 04-09-13 Fig 11. Package outline SOD323F (SC-90) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMEG2005EH Package Description Packing quantity 3000 10000 SOD123F 4 mm pitch, 8 mm tape and reel -115 -135 SOD323F 4 mm pitch, 8 mm tape and reel -115 -135 PMEG3005EH PMEG4005EH PMEG2005EJ PMEG3005EJ PMEG4005EJ [1] For further information and the availability of packing methods, see Section 13. PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 9 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 10. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 12. Reflow soldering footprint SOD123F 3.05 2.80 2.10 1.60 solder lands solder resist 1.65 0.95 0.50 0.60 occupied area solder paste 0.50 (2×) msa433 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 13. Reflow soldering footprint SOD323F (SC-90) PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 10 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEGXX05EH_EJ_SER_2 20100113 Product data sheet - PMEGXX05EH_EJ_SER_1 Modifications: PMEGXX05EH_EJ_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. 20050412 Product data sheet PMEGXX05EH_EJ_SER_2 Product data sheet - - © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 11 of 13 PMEGxx05EH/EJ series NXP Semiconductors 0.5 A very low VF MEGA Schottky barrier rectifiers 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMEGXX05EH_EJ_SER_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 13 January 2010 12 of 13 NXP Semiconductors PMEGxx05EH/EJ series 0.5 A very low VF MEGA Schottky barrier rectifiers 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 January 2010 Document identifier: PMEGXX05EH_EJ_SER_2
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