RU1HE3H

RU1HE3H N-Channel Advanced Power MOSFET MOSFET Features • 100V/3A, RDS (ON) =135mΩ (Typ.) @ VGS=10V RDS (ON) =150mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected Pin Description SOP-8 • Lead Free and Green Available Applications • Converters • LED Backlight Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current N-Channel MOSFET Rating 100 ±20 150 -55 to 150 TA=25°C 3 ① Unit V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TA=25°C TA=25°C TA=70°C PD RθJA ② 9 A A 3 2.4 2.5 1.6 50 Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 www.ruichips.com RU1HE3H Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU1HE3H Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 100V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS= 10V, IDS=3A VGS= 4.5V, IDS=2A 100 1 30 1.5 2 2.7 ±10 135 150 150 180 V µA V µA mΩ mΩ Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=2.5A, VGS=0V ISD=2.5A, dlSD/dt=100A/µs 43 78 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 50V, Frequency=1.0MHz VDD=50V, RL=20Ω, IDS=2.5A, VGEN= 10V, RG=6Ω 0.6 950 95 40 13 40 35 14 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to productio n testing. 18 VDS=80V, VGS= 10V, IDS=2.5A 4 5 24 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 2 www.ruichips.com RU1HE3H Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) ID - Drain Current (A) www.ruichips.com RU1HE3H Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 4 Normalized Threshold Voltage Tj - Junction Temperature (°C) RDS(ON) - On - Resistance (m) www.ruichips.com RU1HE3H Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 5 www.ruichips.com RU1HE3H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 6 www.ruichips.com RU1HE3H Ordering and Marking Information RU1HE3 Package (Available) H : SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 7 www.ruichips.com RU1HE3H Package Information SOP-8 SYMBOL A A1 A2 b c D MM MIN 1.350 0.100 1.350 0.330 0.170 4.700 MAX 1.750 0.250 1.550 0.510 0.250 5.100 MIN INCH MAX 0.069 0.010 0.061 0.020 0.010 0.200 SYMBOL E E1 e L θ MIN 3.800 5.800 0.400 0° 0.053 0.004 0.053 0.013 0.006 0.185 MM MAX 4.000 6.200 1.270 8° INCH MIN 0.150 0.228 0.016 0° MAX 0.157 0.244 0.050 8° 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 8 www.ruichips.com RU1HE3H Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 9 www.ruichips.com