RU2HE2D

RU2HE2D N-Channel Advanced Power MOSFET MOSFET Features • 200V/1.2A, RDS (ON) =0.95Ω (Typ.) @ VGS=10V RDS (ON) =1Ω (Typ.) @ VGS=4.5V • ESD Protected • Reliable and Rugged • Fast Switching • Lead Free and Green Available Pin Description SOT-223 Applications • Power Management • DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 200 ±20 150 -55 to 150 TA=25°C TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 1 4.5 1.2 0.9 2.5 1.6 50 W °C/W ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested ID PD RθJA ② Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 www.ruichips.com RU2HE2D Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU2HE2D Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 200V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS= 10V, IDS=1A VGS= 4.5V, IDS=0.6A 200 1 30 2 3 4 ±10 0.95 1 1.2 1.5 V µA V µA Ω Ω Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs 52 80 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=100V, Frequency=1.0MHz VDD=100V, RL=100Ω, IDS=1A, VGEN= 10V, RG=25Ω 1.2 360 42 24 8 16 13 9 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge ①Current limited by maximum junction temperature. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. 12 VDS=160V, VGS= 10V, IDS=1A 2.8 4.1 15.6 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 2 www.ruichips.com RU2HE2D Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU2HE2D Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 RDS(ON) - On - Resistance (m) www.ruichips.com RU2HE2D Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU2HE2D Ordering and Marking Information RU2HE2 Package (Available) D : SOT-223; Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 6 www.ruichips.com RU2HE2D Package Information SOT-223 SYMBOL A A1 A2 b c D D1 MM MIN 1.520 0.000 1.500 0.660 0.250 6.200 2.900 MAX 1.800 0.100 1.700 0.820 0.350 6.400 3.100 MIN INCH MAX 0.071 0.004 0.067 0.032 0.014 0.252 0.122 SYMBOL E E1 e e1 L θ MIN 3.300 6.830 4.500 0.900 0° 0.060 0.000 0.059 0.026 0.010 0.244 0.114 MM MAX 3.700 7.070 4.700 1.150 10° INCH MIN 0.130 0.269 0.177 0.035 0° MAX 0.146 0.278 0.185 0.045 10° 2.300(BSC) 0.091(BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 7 www.ruichips.com RU2HE2D Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 8 www.ruichips.com