RU75N08L

RU75N08L N-Channel Advanced Power MOSFET Features Pin Description • 75V/80A, D RDS (ON) =8mΩ(Typ.)@VGS=10V • Ultra Low On-Resistance • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S TO252 Applications D • High Speed Power Switching G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 75 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 80 A TC=25°C 320 A TC=25°C 80 TC=100°C 57 TC=25°C 158 TC=100°C 79 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① ② 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation A W RJC Thermal Resistance-Junction to Case 0.95 °C/W RJA Thermal Resistance-Junction to Ambient 100 °C/W 361 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 1 www.ruichips.com RU75N08L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75N08L Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) 75 V VDS=75V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=40A 30 2 3 8 µA 4 V ±100 nA 11 mΩ 1.2 V Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=20A, VGS=0V ISD=40A, dlSD/dt=100A/µs 50 ns 110 nC 1.4 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss VGS=0V, VDS=30V, Frequency=1.0MHz Reverse Transfer Capacitance 170 td(ON) Turn-on Delay Time 22 tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time VDD=35V,IDS=1A, VGEN=10V,RG=7Ω Turn-off Fall Time 3400 450 11 70 pF ns 62 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDS=60V, VGS=10V, IDS=80A 75 18 nC 25 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 60A. ③Limited by TJmax, IAS =38A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 2 www.ruichips.com RU75N08L Ordering and Marking Information Device Marking Package RU75N08L RU75N08L TO252 Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 Packaging Quantity Reel Size Tape width Tape&Reel 3 2500 13'' 16mm www.ruichips.com RU75N08L Typical Characteristics Power Dissipation 180 160 PD - Power (W) Drain Current 90 80 70 ID - Drain Current (A) 140 120 60 100 50 80 40 60 30 40 20 20 10 0 VGS=10V 0 0 25 50 75 100 125 150 175 25 50 Safe Operation Area RDS(ON) limited ID - Drain Current (A) 1000 100 10µs 100µs 1ms 10ms 10 DC 1 TC=25°C 0.1 0.1 1 10 100 125 150 175 TJ - Junction Temperature (°C) 100 RDS(ON) - On - Resistance (mΩ) TJ - Junction Temperature (°C) 75 Drain Current 30 IDS=40A 25 20 15 10 5 0 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=0.95°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 4 www.ruichips.com RU75N08L Typical Characteristics Output Characteristics VGS=8,9,10V 120 90 6V 5V 60 3V 30 0 0 1 2 3 Drain-Source On Resistance 30 4 5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 150 25 20 15 VGS=10V 10 5 0 0 20 40 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 100 VGS=10V IDS=40A 1.5 1.0 0.5 TJ=25°C Rds(on)=8mΩ -50 -25 0 25 50 75 100 125 150 TJ=150°C 10 1 TJ=25°C 0.1 0.01 0.0 0.2 175 0.4 Capacitance VGS - Gate-Source Voltage (V) Frequency=1.0MHz Ciss 4000 3000 2000 1000 Coss Crss 0 1 10 100 1 1.2 1.4 10 VDS=60V IDS=80A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 0.8 Gate Charge 6000 5000 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) C - Capacitance (pF) 80 Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance 2.5 60 ID - Drain Current (A) 20 40 60 80 QG - Gate Charge (nC) 5 www.ruichips.com RU75N08L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 6 www.ruichips.com RU75N08L Package Information TO252 θ1 θ1 θ1 θ θ2 MM SYMBOL A A1 b b3 c D D1 E E1 e H L L1 L2 L3 L4 θ θ1 θ2 MIN 2.200 * 0.660 5.130 0.470 6.000 6.500 4.700 9.800 1.400 0.900 0.600 0° 5° 5° Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 INCH NOM 2.300 * 0.760 5.295 0.535 6.100 5.30 REF 6.600 4.810 2.28 REF 10.100 1.550 2.743 REF 0.510 BSC 1.075 0.800 * 7° 7° 7 MAX 2.400 0.100 0.860 5.460 0.600 6.200 MIN 0.087 * 0.026 0.202 0.019 0.236 6.700 4.920 0.256 0.185 10.400 1.700 0.386 0.055 1.250 1.000 8° 9° 9° 0.035 0.024 0° 5° 5° NOM 0.091 * 0.030 0.208 0.021 0.240 0.20 REF 0.260 0.189 0.09 REF 0.398 0.061 0.108 REF 0.020 BSC 0.042 0.031 * 7° 7° MAX 0.094 0.004 0.034 0.215 0.024 0.244 0.264 0.194 0.409 0.067 0.049 0.039 8° 9° 9° www.ruichips.com RU75N08L Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2016 8 www.ruichips.com