STM9926

S T M9926 S amHop Microelectronics C orp. J a n. 1 0 2 0 0 8 v e r 1 . 0 D ua l N -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor P R O D U C T S U MMA R Y V DS S 2 0V F E AT U R E S ( m W ) Max ID 6.5A R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 28 @ V G S = 4 .0V 38 @ V G S = 2 .5V R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge . E S D P rote c te d. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit 20 10 6. 5 30 1. 7 2 -5 5 to 1 5 0 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a 1 R JA 62. 5 C /W S T M9926 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A = 2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 1 6 V, V G S = 0 V V G S = 1 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 4 . 0 V, I D = 6 . 5 A V G S = 2 . 5 V, I D = 5 A V D S = 5 . 0 V, I D = 6 . 5 A Min Typ C Ma x U nit 20 1 10 0. 5 0. 9 23 30 16 540 160 100 1. 5 28 38 V uA uA V m ohm m ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e F orwa rd T ra ns c onduc ta nc e S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =8V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = 1 0 V, ID = 1A , V G E N = 4 . 5 V, R L = 1 0 o hm R G E N = 1 0 o hm V DS =10V, ID =6. 5A , V G S =4V V DS =10V, ID =6. 5A, V G S =2. 5V V DS =10V, ID = 6. 5 A V G S =4V 2 15 20 36 11 6. 4 4. 6 1. 1 2. 8 ns ns ns ns nC nC nC nC S T M9926 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =1 . 7 A M in T y p M a x U n it 0. 72 1. 2 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 20 16 V G S =8V V G S =3V V G S =2.5V 12 V G S =2V 15 12 ID , D ra in C urre nt( A ) I D , D ra in C urre nt ( A ) 9 8 6 T j=125 C 3 0 0. 0 25 C 0. 4 0. 8 1. 2 1. 6 2. 0 2. 4 -55 C 4 V G S =1.5V 0 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 60 1. 5 F igure 2 . T ra ns fe r C ha ra c te ris tic s R DS (ON) , O n-R e s is ta nc e N ormalized 50 1. 4 1. 3 1. 2 1. 1 1. 0 0 V G S =2.5V I D =5A V G S =4V I D =6.5A R D S ( o n ) ( m W) 40 V G S =2.5V 30 20 10 1 V G S =4V 1 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) I D , D ra in C urre nt ( A ) T j, J unction T emperature ( C ) F igure 3 . O n-R e s is ta nc e vs . D ra in C urre nt a nd G a te V olta ge 3 F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture S T M9926 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =6.5A Is , S ource-drain current (A) 50 10.0 5.0 1 25 C R D S ( o n ) ( m W) 40 30 20 75 C 10 0 25 C 25 C 75 C 1 25 C 0 1 2 4 6 8 1.0 0 0.3 0.6 0.9 1.2 1.5 V G S , G a te -S ourc e V olta ge ( V ) V S D , B ody Diode F orward V oltage (V ) F igure 7 . O n-R e s is ta nc e vs . G a te -S ourc e V olta ge F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M9926 C is s 500 V G S , G ate to S ource V oltage (V ) 600 5 4 3 2 1 0 V DS =10V I D =6.5A C , C a pa c ita nc e ( pF ) 400 300 C os s 200 C rs s 100 0 0 2 4 6 8 10 12 6 0 1 2 3 4 5 6 7 8 V D S , D ra in-to S ourc e V olta ge ( V ) Q g, T otal G ate C harge (nC ) F igure 9 . C a pa c ita nc e 600 S witching T ime (ns ) I D , Drain C urrent (A) Tr TD(off) Tf TD(on) F igure 10. G ate C harge 50 30 10 R D 100 60 10 ON S( )L im it 10 1s 10 ms 0m s 1 DC 1 1 V D S =10V ,I D=1A V G S =4.5V 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 60 6 10 6 0 1 00 30 0 60 0 R g, G ate R es is tance ( W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T M9926 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 6 S T M9926 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 7