9926A

Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode Field Effect Transistor 9926A Features VDS (V) = 20V ID = 7A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 33mΩ (VGS = 2.5V) RDS(ON) < 42mΩ (VGS = 1.8V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 SOP-8 top view D1 G1 D2 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B Units V ±8 V ID 6 IDM 40 Junction and Storage Temperature Range W 1.44 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State GUANGDONG HOTTECH A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 20 7 TA=25°C Power Dissipation S2 RθJA RθJL Typ 48 74 35 INDUSTRIAL CO., LTD °C Max 62.5 110 40 Units °C/W °C/W °C/W Page:P4 -P1 Plastic-Encapsulate Mosfets 9926A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.3 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd A 26.4 33 mΩ VGS=1.8V, ID=4A 33.3 42 mΩ 1 V 3 A VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance V VGS=2.5V, ID=5A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Rg 0.8 36 Forward Transconductance Output Capacitance nA 29.2 VSD Coss 0.5 100 26 TJ=125°C gFS Crss µA 5 21.6 VGS=4.5V, ID=7A IS Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=7A Gate Drain Charge 22 0.76 mΩ S 1050 pF 163 pF 129 pF 4 Ω 15.2 nC 1 nC 4 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 13.2 ns trr Body Diode Reverse Recovery time IF=5A, dI/dt=100A/µs 21 ns Qrr Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs 7.1 nC VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω 6.5 ns 9 ns 56.5 ns A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P2 Plastic-Encapsulate Mosfets 9926A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 2.5V 4.5V 20 2V 25 12 15 ID(A) ID (A) 20 VDS=5V 16 VDS=16V, VGS=0V VGS=1.5V 8 10 125°C 4 5 0 0 0 1 2 3 4 5 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 45 2.4 1.8 Normalized On-Resistance 40 VGS=1.8V 35 RDS(ON) (mΩ) 25°C 30 VGS=2.5V 25 20 VGS=4.5V 15 10 ID=7A 1.6 VGS=4.5V 1.4 1.2 VGS=2.5V VGS=1.8V 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 1.0E+00 50 125°C ID=7A IS (A) RDS(ON) (mΩ) 1.0E-01 40 125°C 30 25°C 1.0E-02 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage GUANGDONG HOTTECH 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics INDUSTRIAL CO., LTD Page:P4 -P3 Plastic-Encapsulate Mosfets 9926A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 5 VDS=15V ID=7A 4 1600 1400 Capacitance (pF) VGS (Volts) VDS=16V, VGS=0V 3 2 1200 Ciss 1000 800 600 Coss 400 1 Crss 200 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 20 RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 1ms 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 0.1 1 0 0.001 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 10 10s 0.1 ZθJA Normalized Transient Thermal Resistance 15 40 Power (W) ID (Amps) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P4