2SD2082

2SD2082 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) Application : Driver for Solenoid, Motor and General Purpose Conditions V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO 16(Pulse26) A hFE IC=10mA 120min VCE=4V, IC=8A 2000min 15.6±0.2 V 23.0±0.3 V 1 A VCE(sat) IC=8A, IB=16mA 1.5max PC 75(Tc=25°C) W VBE(sat) IC=8A, IB=16mA 2.5max V Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz °C COB VCB=10V, f=1MHz 210typ pF 3.3 IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 5 8 10 –5 16 –16 0.6typ 7.0typ 1.5typ 0 0 1 2 3 4 5 0 0.2 0.5 1 5 50 m m (V C E =4V) 0.5 1 5 10 ˚C 25 Transient Thermal Resistance 125 5000 ˚C –30 ˚C 1000 500 100 0.02 16 0.5 N 100 0.2 ot 500 10000 DC Curr ent Gain h F E ec o R 1000 1 f T – I E Characteristics (Typical) mp) –30 ˚C ( Cas e Te emp 1 2 θ j-a – t Characteristics 10 5 16 5 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) ) ) 0 Base-Emittor Voltage V B E (V) 20000 5000 mp 0 100 200 h FE – I C Temperature Characteristics (Typical) Typ 10000 Te 5˚C 12 10 (V C E =4V) 30000 se 4 Base Current I B (mA) h FE – I C Characteristics (Typical) DC Curr ent Gain h F E 8A 4A 8 (Ca 1 6 Collector-Emitter Voltage V C E (V) (V CE =4V) ew I C =16A θ j - a (˚C /W) 10 E 12 Collector Current I C (A) I B =1m A rN 1. 5m A 2 fo 3mA en Collector Current I C (A) 20 C 16 d 6mA 3 de A B 3.35 Weight : Approx 2.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) A A m 20 40m m 12 1.5 es ig RL (Ω) 4.4 D VCC (V) 0.65 +0.2 -0.1 5.45±0.1 1.5 26 +0.2 -0.1 ns 1.05 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 0.8 2.15 se T –55 to +150 1.75 (Ca Tstg 3.45 ±0.2 3.0 IB 5.5±0.2 ø3.3±0.2 a b 25˚C IC Unit 0.8±0.2 Unit 120 5.5 Ratings VCBO VEBO External Dimensions FM100(TO3PF) (Ta=25°C) Ratings 1.6 ■Electrical Characteristics Symbol (2kΩ) (100Ω) E 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) C B 16.2 Darlington Symbol Equivalent circuit 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 80 50 0µ s DC 5 –1 Emitter Current I E (A) 146 –5 –10 –16 0.05 0.03 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 nk –0.5 si 0 –0.05 –0.1 40 at Without Heatsink Natural Cooling 0.1 he 0.5 ite 1 60 fin Collector Cur rent I C (A) 10 s In 10 1m ith 20 s W Cut- off F req uenc y f T (MH Z ) 10 m Ma xim um Powe r Dissipat io n P C (W) 10 Typ 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150