SPI-8002TW-TL

1-1-3 DC/DC Converter ICs SPI-8001TW/SPI-8002TW/SPI-8003TW 2-Output, Step-down Switching Mode ■Features ■Absolute Maximum Ratings*1 • 2 regulators combined in one package Ratings Symbol Parameter • Output current: 1.5A × 2 (HSOP 16 Pin Surface mount package) Input Voltage • High efficiency: TYP80% (SPI-8001TW), TYP78% (SPI-8002TW) SPI-8002TW SPI-8003TW VIN 21 40 40 V VCC 21 40 40 V VC/E 21 40 40 Power Dissipation*2, *3 • Variable output voltage: 1.0 to 16V (SPI8001TW), 1.0 to 24V (SPI-8002TW) • Built-in reference oscillator (250kHz): Enables to downsize a choke-coil Unit SPI-8001TW PD V 3.0 W Junction Temperature Tj +135 +150 Storage Temperature Tstg –40 to +135 –40 to +150 Thermal Resistance (junction to case)*2 θ j-c 9.0 °C/W Thermal Resistance (junction to ambient air)*2 θ j-a 35.8 °C/W °C °C *1: Absolute maximum ratings show the destructive limit. No parameter should exceed the ratings in transient or normal operations. *2: When mounted on glass-epoxy board 70cm2 (copper laminate area 30.8cm2). *3: Limited by thermal protection. ns • Low circuit current consumption: ≤ 1µA (at output OFF) • High accuracy reference voltage: ±1% es ig • Built-in foldback-overcurrent and thermal protection circuits D • Built-in ON/OFF circuit (soft start available) – per output ■Applications ew • Onboard local power supplies • For stabilization of the secondary-side output voltage of switching power supplies ■Recommended Operating Conditions*1 rN • OA equipment Symbol SPI-8001TW VIN VO+3 VCC 4.5 VC/E VO Output Current Range IO Tjop Operating Temperature Range Top 1 m Operating Junction Temperature Range 20 20 16 SPI-8003TW Unit max. min. VO+3 38 VO+3 38 V 4.5 38 4.5 38 V 38 V 24 V 20 en Output Voltage Range min. de Input Voltage Range SPI-8002TW max. d min. fo Ratings Parameter 38 1 1.5 24 1 1.5 max. 1.5 A –30 +135 –30 +135 –30 +125 °C –30 +135 –30 +135 –30 +85 °C N ot R ec o m *1: Recommended operating conditions show the operating conditions required for the normal circuit function described in the electrical characteristics. These conditions must be followed in actual use. 60 ICs SPI-8001TW/SPI-8002TW/SPI-8003TW ■Electrical Characteristics*1 (Ta=25°C) Ratings Symbol 0.996 1.006 Conditions max. min. 1.016 0.996 1.006 1.016 0.966 ±0.1 80 Conditions Eff2 215 Conditions 10 Conditions Overcurrent Protection Starting Current IS 60 VIN=15V, VCC=5V, IO=0V, VO≤12V IIN (off) 8.5 1 Low Level Voltage 1 1 1 — fo 0.8 VIN=VCC=15V IC/EH 95 Conditions VSSL 60 95 Conditions µA VC/E=20V 0.5 VIN=VCC=15V VSSL=0V, VIN=VCC=15V V 95 VC/E=20V 80 0.8 VIN=VCC=14V 0.5 Conditions V VIN=VCC=14V d de Conditions mA 2 0.8 ISSL 8.5 VIN=VCC=15V VC/EL mA VCC=14V, IO=0V, SS1=SS2=0V 2 Conditions µA VIN=14V, VCC=5V, IO=0A, SS1=SS2=0V — 2 µA VIN=14V, VC/E=0V or Open 0.5 V VIN=VCC=14V 60 80 60 80 µA VSSL=0V, VIN=VCC=14V m Inflow Current at Low mA VCC=14V, IO=0A Conditions en Inflow Current at High 8.5 4 VC/EH mA VIN=14V, VCC=5V, IO=0A, VO≤12V VIN=14V, VC/E=0V or Open m Low Level Voltage A — — mV 4 VCC=15V, VC/E=0V or Open Conditions High Level Voltage 40 IIN (ssov) ICC (ssov) Quiescent Circuit Current 6 10 1 1 Conditions Quiescent Circuit Current 5 40 VIN=15V, VC/E=0V or Open ICC (off) mV VIN=VCC=14V 8.5 VCC=15V, IO=0A 60 1.6 4 Conditions Quiescent Circuit Current 4 30 VIN=VCC=14V, VO=5V, IO=0.2 to 1.5A 4 Conditions Quiescent Circuit Current 3 10 1.6 ICC kHz VIN=14V, IO=0.1A, COSC=100pF 60 VIN=VCC=15V Conditions % 400 VIN=VCC=9 to 18V, VO=5V, IO=1A 40 1.6 IIN Quiescent Circuit Current 2 30 VIN=VCC=15V, VO=5V, IO=0.2 to 1.5A Conditions Quiescent Circuit Current 1 200 VIN=VCC=10 to 20V, VO=5V, IO=1A VLOAD Load Regulation 285 ns 30 % 81 es ig Line Regulation 250 mV/ °C VIN=14V, VCC=5V, VO=5V, IO=0.5A, IIN : excluding ICC VIN=VCC=15V, VO=5V, IO=0.5A VLINE V VIN= VCC=14V, VO=5V, IO=0.5A, IIN : including ICC 81 Conditions 1.016 78 VIN=15V, VO=5V, IO=0.5A, VCC=5V, IIN: excluding ICC 250 1.006 VIN=14V, IO=0.1A, Ta=–30 to +125°C 78 83 fosc max. ±0.1 VIN=VCC=15V, VO=5V, IO=0.5A, IIN: including ICC Conditions Unit typ. VIN=14V, IO=0.1A VIN=10V, VO=1V, IO=0.1A, Ta=–30 to +135°C Eff1 Oscillation Frequency typ. ±0.1 Conditions Efficiency 2*2 SPI-8003TW min. VIN=10V, VO=1V, IO=0.1A ∆VREF/∆T Efficiency 1*2 SPI-8002TW max. ew Temperature Coefficient of Reference Voltage SS Pin*3 typ. D VREF Reference Voltage C/E Pin SPI-8001TW min. rN Parameter ec o *1: Electrical characteristics show the characteristic ratings guaranteed when operating the ICs under the measurement conditions described in the above table. *2: Efficiency is calculated from the following formula. N ot R η (%) = VO·IO × 100 VIN·IIN *3: Pin 6 and pin 11 are the SS pins. Soft start at power on can be performed with capacitors connected to these pins. The outputs can also be turned ON/OFF with these pins. The outputs are stopped by setting the voltages of these pins to VSSL or lower. SS-pin voltages can be changed with open-collector drive circuits of transistors. When using both the soft-start and ON/OFF functions together, the discharge currents from C4 and C5 flow into the ON/OFF control transistors respectively. Therefore, limit the currents securely to protect the transistors if C4 and C5 capacitances are large. The SS pins are pulled up to the power supply in the ICs, so applying the external voltages are prohibited. ICs 61 1-1-3 DC/DC Converter ICs ■External Dimensions (HSOP16) (Unit : mm) 1.35±–0.2 1+0.1/–0.05 (Between the root of leads and back side) (Heatsink thickness) 10.5±0.2 16 9 0 to 8° 8 2.5±0.2 Enlarged View of A es ig 2.75MAX 1 ns 0.9±0.3 10.5±0.3 2.0+0.2/–0.08 0 to 0.1 A S 0.10 D 0.25+0.15/–0.05 S ew 12.2±–0.2 (Gate remains: Not included in dimensions) (11) Pin Assignment (SPI-8001TW, SPI-8002TW) q AGND o AGND !0 VREF2 w VIN1 e VCC !1 SS2 r SWout1 !2 DGND2 t DGND1 !3 SWout2 y SS1 !4 C/E !5 VIN2 u VREF1 i N.C !6 N.C 16 de d (4.5) 7.5±0.2 fo (2) rN Pin Assignment (SPI-8003TW) q AGND w VIN1 e VCC r SWout1 t DGND1 y SS1 u VREF1 i COSC 9 AGND ROSC VREF2 SS2 DGND2 SWout2 C/E VIN2 0.4+0.15/–0.05 en 1.27±0.25 o !0 !1 !2 !3 !4 !5 !6 m Product Mass : Approx.0.86g R ec o m ■Block Diagram 3 VCC ot VC/E VIN VIN + C1 SPI-8001TW/SPI-8002TW + 3 VCC C6 3V 14 Start C/E VREF PReg OSC fdown TSD UVLO 15 VC/E 3V C/E Start VREF N C4 6 SS1 7 VREF1 10 VIN1 PWM Logic – – Buffer-Amp f down cut Amp UVLO DGND1 VIN2 AGND L1 4 5 VO1 C2 C7 6 SS1 7 VREF1 3V + – – + Buffer-Amp C5 15 f down cut R1 2 SWOUT1 4 DGND1 5 Drive + – – Amp VIN1 OCP PWM Logic R5 + Di1 OCP 3V f down cut C9 SWOUT1 PWM Rosc Cosc R7 Drive + – – + TSD 8 2 OCP 3V + fdown C4 1V 1V R5 OSC RESET PReg RESET f down cut C1 SPI-8003TW PWM VIN2 AGND L1 11 10 SS2 VREF2 PWM Logic + – C5 Buffer-Amp AGND + – – + – Amp SWOUT2 13 PWM L2 VO2 DGND2 C3 12 R3 R4 62 ICs R6 11 SS2 VREF2 + Di2 AGND 1, 9 R2 12 Drive C7 R1 R2 R6 C2 16 OCP 3V VO1 + Di1 PWM Logic + – C8 C6 Buffer-Amp AGND + – – – + Amp Drive SWOUT2 14 PWM L2 VO2 + Di2 DGND2 C3 13 AGND 1, 9 R3 R4 C8 SPI-8001TW/SPI-8002TW/SPI-8003TW ■Typical Connection Diagram VIN VCC 2 6 5 VCC SWout1 L1 4 2 V01 Ch1 SS1 R1 Di1 7 6 + C2 IREF1 DGND1 C4 15 C1 VIN2 5 R2 C4 V02 VC1 Ch1 Di1 7 C2 IREF1 VIN2 SWout2 14 VC2 Ch2 VREF2 10 12 + C3 IREF2 DGND2 R6 C8 R4 AGND C5 13 SS2 1, 9 GND CORC 8 : 1kΩ : 47 µH : SJPB-H6 C1 C2, C3 C4 C5, C6 C7, C8 : 220 µF/50V : 470 µF/25V : 1 µF/50V : 1 µF/10V : 0.1 µF/50V rN ew R5, R6 L1, L2 Di1, Di2 (Sanken) GND D : 220 µF/50V : 470 µF/25V : 1 µF : 0.1 µF 11 IREF2 C9 C1 C2, C3 C4, C5 C6, C7, C8 VREF2 DGND2 AGND C6 1, 9 GND Ch2 Di2 R3 ns 12 L2 R3 Di2 es ig R6 SS2 C7 R2 SPI-8003TW 16 C1 L2 11 R1 + DGND1 C5 13 L1 4 SWout1 SS1 + SWout2 C/E VIN1 VREF1 R5 C7 SPI-8000TW + C6 C/E VIN1 15 3 VREF1 R5 VC/F VIN VC/E 14 3 + C3 C8 R4 RCSC 10 R7 C9 L1, L2 R2, R4 R5, R6 Di1, Di2 GND : 100pF/10V : 47 µH : 1kΩ : 1kΩ : SJPB-H6 (Sanken) m m en de d fo Diodes Di1, Di2 • Be sure to use Schottky-barrier diodes for Di1 and Di2. If other diodes like fast recovery diodes are used, IC may be destroyed because of the reverse voltage generated by the recovery voltage or ON voltage. Choke coils L1, L2 • If the winding resistance of the choke coil is too high, the efficiency may drop below the rated value. • As the overcurrent protection starting current is about 2.0A, take care concerning heat radiation from the choke coil caused by magnetic saturation due to overload or short-circuited load. • Use a closed-magnetic-path coil to prevent interference between the channels SWout1 and SWout2. Capacitors C1, C2, C3 • As large ripple currents flow through C1, C2 and C3, use high-frequency and low-impedance capacitors suitable for switching mode power supplies. Especially when the impedance of C2 and C3 are high, the switching waveforms may become abnormal at low temperatures. For C2 and C3, do not use capacitors with extremely low equivalent series resistance (ESR) such as OS capacitors or tantalum capacitors, which may cause abnormal oscillation. Resistors R1, R2, R3, R4 • R1, R2, R3 and R4 are resistors for setting output voltages. Set the resistors so that IREF is approx. 1 mA. For example, R1 and R2 can be calculated as shown below. (VO1–VREF1) (VO1–V) VREF1 1 .= = (Ω), R2= = 1(KΩ) 1×10–3 IREF1 1×10–3 . IREF1 ec o R1= R To create the optimum operating conditions, place the components as close as possible to each other. ot ■Ta-PD Characteristics N 3.5 Power Dissipation PD (W) 3.0 θ j-a (Copper Laminate Area) 35.8°C/W (30.8 cm2) 38.2°C/W (15.6 cm2) PD = VO·IO 42.6°C/W (8.64 cm2) 2.5 100 VO –1 – VF·IO 1– ηχ VIN 52.3°C/W (3.34 cm2) 2.0 VO : VIN : IO : ηχ : VF : 69.2°C/W (0.84 cm2) 1.5 1.0 0.5 0.0 –25 0 25 50 75 100 Output Voltage Input Voltage Output Current Efficiency (%) D1 Forward Voltage SJPB-H6···0.45V (IO=1A) 125 135 150 Ambient Temperature Ta (°C) Note 1: The efficiency depends on the input voltage and the output current. Therefore, obtain the value from the efficiency graph and substitute the percentage in the formula above. Note 2: Thermal design for D1 must be considered separately. ICs 63