TFC563D

3-1 Thyristors Thyristors Absolute Maximum Ratings Part Number V RSM V DSM V RRM V DRM IT (AV) (V) (V) (A) TF541S-A 500 400 5.0 SLA0201 650 600 5× 4 I T (RMS) (50Hz) Conditions Tc (°C) (A) 88 ITSM 50Hz Single Half Sine Wave, Default T j =125°C (A) P GM P G (AV) V RGM IFGM Tj T stg (W) (W) (V) (A) (°C) (°C) I RRM I DRM Conditions Tj (mA) (°C) max 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125 700 600 5.0 88 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125 – 700 3.0 127 4.7 60 5.0 0.5 5.0 2.0 –40 to +150 2.0 150 TFA57S – 700 5.0 115 7.8 80 5.0 0.5 5.0 2.0 –40 to +150 2.0 150 TFA87S – 700 8.0 98 12.6 120 5.0 0.5 5.0 2.0 –40 to +150 2.0 150 TFA107S – 700 10 86 15.7 160 5.0 0.5 5.0 2.0 –40 to +150 2.0 150 TFA38S – 800 3.0 50 4.7 60 5.0 0.5 5.0 TFA58S – 800 5.0 50 7.8 80 5.0 0.5 5.0 TFA88S – 800 8.0 50 12.6 120 5.0 0.5 5.0 TFA108S – 800 10 50 15.7 160 5.0 0.5 5.0 es ig ns TF561S-A TFA37S –40 to +150 2.0 150 2.0 –40 to +150 2.0 150 2.0 –40 to +150 2.0 150 2.0 –40 to +150 2.0 150 en de d fo rN ew D 2.0 m m 3-Pin Reverse Conducting Thyristors for HID Lamp Ignition Absolute Maximum Ratings Part Number 600 500 ot TFC563D (A) (A/µs) R (V) di/dt*1 P GM ec o I TRM*1 VDRM 1500 (W) 5.0 PG (AV) (W) V RGM (V) 0.5 N *1: TC≤100°C, VD≤430V, Wp≤1.0µs, IG≥70mA, dig/dt≥0.5A/µs, 100kcycles *2: TC≤100°C, VD≤430V, Wp≤1.0µs, 100kcycles 176 Thyristors 5.0 I FGM*2 (A) 2.0 I FRM (A) 450 Tj (°C) Tstg (°C) –40 to +125 I DRM (mA) max 1.0 VTM Conditions Tj (°C) 125 (V) max 1.4 Conditions Tc I TM (°C) (A) 25 10 3-1 Thyristors Electrical Characteristics IGT V GT V TM Conditions I TM Tc (°C) (A) (V) max (V) typ 1.4 25 1.4 25 10 max typ 1.5 10 0.7 1.5 VGD (mA) max 0.03 Conditions Tc (°C) 0.2 5.0 (V) min 25 10 Tj (°C) 0.1 25 0.1 125 125 dv/d t Conditions Conditions Tj VD (V) (V/µ s) (°C) typ 1/2V DRM 1/2V DRM 20 50 125 125 IH Mass Rth Package VD (V) 1/2V DRM 1/2V DRM (mA) typ g (°C/W) max 4.0 4.0 TO220F SIP12 with Fin 4.0 2.0 6.0 (SLA12Pin) 25 10 1.5 0.03 0.2 25 0.1 125 1/2V DRM 20 125 1/2V DRM 4.0 4.0 TO220F 2.0 1.5 25 10 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 4.1 TO220F 2.0 1.5 25 15 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 3.8 TO220F 2.0 1.4 25 20 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 1.35 25 20 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 1.5 25 10 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 1.5 25 15 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1.5 25 20 − 1.0 − 15 25 0.2 125 1/2VDRM 300 1.35 25 20 − 1.0 − 15 25 0.2 125 1/2VDRM 300 ns 1.4 3.5 TO220F 2.0 20 3.4 TO220F 2.0 15 4.1 TO220F 2.0 1/2VDRM 15 3.8 TO220F 2.0 125 1/2VDRM 20 3.5 TO220F 2.0 125 1/2VDRM 20 3.4 TO220F 2.0 Thyristors 177 m m en de d fo rN ew D es ig 20 Electrical Characteristics max (mA) max 30 25 (V) min 0.1 IH Rth Tj (°C) 125 VD (V) 480 (mA) typ 12 (°C/W) max 4.0 Mass VF Conditions (V) max 1.4 Conditions IF (A) 10 Package (g) TO-220S 1.5 N ot 1.5 typ Conditions Tc (°C) R (V) typ VGD ec o I GT V GT Package Type (Dimensions) 2.76±0.2 2.54 2.54±0.2 10 3.9 1.35±0.15 1.35±0.15 0.85+0.2 −0.1 0.45+0.2 −0.1 2.54 ns ±0.2 ±0.2 ±0.2 13.0min 0.8 9.75±0.5 13.1±0.5 0.5 ±0.1 ±0.1 4.0 ±0.2 φ 3.3±0.2 a b ±0.15 0.5 −0.1 4.2±0.2 C 2.8±0.2 0.5 8.4 ±0.2 15.8±0.2 2.4±0.2 (3) 9.2±0.3 15.9±0.3 18.95MAX φ 3.2±0.2 φ 3.6±0.2 10.0±0.2 2.54±0.2 0.8 ±0.2 10.16±0.3 16.9 ±0.3 4.5±0.2 1.3±0.2 6.68±0.2 9.9±0.3 (8.7) • TO-220F 15.87±0.3 2.8±0.2 • TO-220F-A (1.3) (1.7) • TO-220 2.54 4.7±0.2 es ig 2.2 (1) (2) (3) (1) (2) (3) a: Part Number b: Lot No. (1)(2)(3) rN ew D Pin No. (1) (2) (3) a: Part Number b: Lot No. 15.6±0.2 1.5 4.4 1.5 ec o R 4.7 ±0.2 11.3 ±0.2 9.0 ±0.2 2.3 ±0.2 N b 2.54 C1.5±0.5 a: Part Number b: Lot No. 4 5 6 7 T1 G T2 G T2 G T2 T1 3 TR1 2 1 5 7 TR2 4 (1.4) 10.5 2.54±0.1 (Measured at the root) 10.2±0.3 (1) Terminal 1 (T1) (2) Terminal 2 (T2) (3) Gate (G) 1 2 3 Ellipse 3.2±0.15×3.8 31.0±0.2 24.4±0.2 16.4±0.2 φ 3.2±0.15 4.8±0.2 1.7±0.1 a b Thy1 12 +0.2 0.85 −0.1 +0.2 1.45±0.15 0.55 −0.1 1.2±0.15 2.2 ±0.7 11×P2.54±0.7=27.94±0.1 8 1.2 ±0.2 3 0.5 ±0.15 2 0.4±0.1 2.54±0.1 (Measured at the root) (1) (2) (3) 31.5max 1 9.1±0.3 0.76±0.1 a: Part Number b: Lot No. Pin 1 0.5±0.15 1.0±0.25 ±0.25 17.78 (0.45) fo (Measured at the root) 0.8max 40±0.2±0.2 20.2 ±0.2 a +0.2 0.65 –0.1 2.6±0.2 (Measured at the root) • SLA12Pin ot • STA8Pin +0.2 1.34 -0.1 0.86 -0.1 +0.2 1.3±0.2 11±0.5 5.45±0.1 (Measured at the root) m (1) (2) (3) en 1.7 +0.2 −0.1 5.45 ±0.1 +0.2 1.05 –0.1 5.45±0.1 4.44±0.2 (2.69) (1.8) 1.75 –0.1 +0.2 2.15 –0.1 0.65+0.2 −0.1 m 5.45 ±0.1 d +0.2 3 +0.2 −0.1 1.05+0.2 −0.1 9.5min (10.4) 16.0±0.2 13.0±0.2 2.7 9.9±0.2 8.5max 20.0min 3.5 2 +0.2 −0.1 (5) 3.35±0.2 (Measured at the root) 1.6 3.3 a b de a b 23±0.3 φ 3.2 ±0.1 9.5±0.2 2.0 ±0.1 • TO-220S Straight 5.5±0.2 3.45±0.2 (16.2) 5.0 ±0.7 1.8 2.0 19.9±0.3 4.0 3.2±0.2 4.8 ±0.2 Cathode (T1) Anode (T2) Gate (G) ( ): Triacs +0.3 -0.5 • TO-3PF 15.6 ±0.3 13.6 ±0.2 9.6 ±0.2 5.5±0.2 • TO-3P 2.4±0.2 ±0.2 Thy2 Thy3 Thy4 1 2 3 4 1 5 6 7 8 9 10 11 a: Part Number b: Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 G K A G K A G K A G K A TR3 6 8 (Unit: mm) 180 Thyristors