3LP01C_09

Ordering number : EN6645B 3LP01C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP01C Features • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Conditions Ratings --30 ±10 --0.1 --0.4 0.25 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-100μA VDS=-10V, ID=-50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-1mA, VGS=-1.5V --0.4 80 110 8 11 27 10.4 15.4 54 Ratings min --30 --1 ±10 --1.4 typ max Unit V μA μA V mS Ω Ω Ω Marking : XA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 32509 MS IM TC-00001903 / 72606 / 33006PE MS IM TB-00002203 / 90100 TS IM TA-1982 No.6645-1/4 3LP01C Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=-10V, ID=-100mA VDS=-10V, VGS=-10V, ID=-100mA VDS=-10V, VGS=-10V, ID=-100mA IS=--100mA, VGS=0V Ratings min typ 7.5 5.7 1.8 24 55 120 130 1.43 0.18 0.25 -0.83 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7013A-013 Switching Time Test Circuit 0.5 2.9 0.1 0V --4V VIN VIN VDD= --15V ID= --50mA RL=300Ω 3 PW=10μs D.C.≤1% D G VOUT 2.5 1.5 3LP01C 0.5 1 0.95 2 0.4 P.G 50Ω S 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.05 1.1 0.3 --0.10 --0.09 --0.08 ID -- VDS --4 .0V --0.20 --0.18 --0.16 ID -- VGS VDS= --10V --3.5V 0V --3 . . --2 5V Drain Current, ID -- A Drain Current, ID -- A --6.0 --0.07 --0.06 --0.05 --0.04 --0.03 --0.02 --0.01 0 0 --0.2 --0.14 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02 0 Ta= VGS= --1.5V --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 75° C --2.5 --3.0 --25 °C V --2.0V 25°C --3.5 --4.0 Drain-to-Source Voltage, VDS -- V IT00077 Gate-to-Source Voltage, VGS -- V IT00078 No.6645-2/4 3LP01C 30 RDS(on) -- VGS Ta=25°C 100 7 RDS(on) -- ID VGS= --4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25 5 3 2 20 15 10 7 5 3 2 1.0 --0.01 Ta=75°C --25°C 25°C --50mA 10 ID= --30mA 5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 2 3 5 7 --0.1 2 3 Gate-to-Source Voltage, VGS -- V 100 7 IT00079 1000 Drain Current, ID -- A IT00080 RDS(on) -- ID VGS= --2.5V RDS(on) -- ID VGS= --1.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 Ta=75°C 25°C 10 7 5 3 2 100 7 5 3 2 --25°C 25°C Ta=75°C --25°C 2 3 5 7 --1.0 2 3 1.0 --0.01 2 3 5 7 --0.1 2 3 10 --0.1 Drain Current, ID -- A 18 16 14 12 10 8 6 4 2 --60 IT00081 1.0 RDS(on) -- Ta Drain Current, ID -- mA IT00082 ⏐yfs⏐ -- ID Forward Transfer Admittance, ⏐yfs⏐ -- S 7 5 3 2 VDS= --10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω A 30m = -V, I D 2.5 = -mA --50 V GS I D= 0V, --4. S= VG 25°C 2 Ta= -5°C 0.1 7 5 3 2 75°C --40 --20 0 20 40 60 80 100 120 140 160 0.01 --0.01 2 3 5 7 --0.1 2 3 Ambient Temperature, Ta -- °C 3 2 IT00083 1000 IS -- VSD VGS=0V Drain Current, ID -- A IT00084 SW Time -- ID 7 Switching Time, SW Time -- ns 5 3 2 VDD= --15V VGS= --4V Source Current, IS -- A --0.1 7 5 tf td(off) 100 7 5 3 2 3 tr td(on) 2 3 5 7 Ta=7 5°C --0.01 --0.5 --25°C 2 25°C --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 IT00085 10 --0.01 Diode Forward Voltage, VSD -- V Drain Current, ID -- A --0.1 IT00086 No.6645-3/4 3LP01C 100 7 5 Ciss, Coss, Crss -- VDS f=1MHz --10 --9 VGS -- Qg VDS= --10V ID= --0.1A Gate-to-Sourse Voltage, VGS -- V --30 IT00087 --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 0 --5 --10 --15 --20 --25 1.0 Drain-to-Source Voltage, VDS -- V 0.30 Total Gate Charge, Qg -- nC IT00088 PD -- Ta Allowable Power Dissipation, PD -- W 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT02382 Note on usage : Since the 3LP01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2009. Specifications and information herein are subject to change without notice. PS No.6645-4/4