MCH3431

Ordering number : ENN8025 MCH3431 MCH3431 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ±12 3.5 14 1 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.8A ID=1.8A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 0.4 2.8 4.8 55 70 415 60 55 11 65 54 61 72 98 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : ZG Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TB-00000408 No.8025-1/4 MCH3431 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=4V, ID=3.5A VDS=10V, VGS=4V, ID=3.5A VDS=10V, VGS=4V, ID=3.5A IS=3.5A, VGS=0 Ratings min typ 5.1 0.95 1.4 0.87 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2167A 0.25 Switching Time Test Circuit VIN 0.3 3 0.15 VDD=15V 4V 0V VIN ID=1.8A RL=8.3Ω VOUT 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 PW=10µs D.C.≤1% D G 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) P.G 50Ω S MCH3431 0.85 SANYO : MCPH3 3.5 ID -- VDS 4.0V 2.5V 2.0 V 3.5 ID -- VGS VDS=10V 3.0 3.0 Drain Current, ID -- A 3.0V 2.5 Drain Current, ID -- A 1.5V 2.5 2.0 2.0 1.5 1.5 1.0 1.0 75 °C 0 0.2 0.4 0.6 0.8 1.0 25° C Ta = 1.2 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.5 VGS=1.0V 0.8 0.9 1.0 0 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V 200 IT07566 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 120 --25 °C IT07567 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 IT07641 100 80 60 V 1.0 4.0 I D= S= , VG V 1.8 I D= VG A, 2. S= 5V ID=1.8A 1.0A 40 20 0 --60 --10 40 90 140 190 IT07569 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C No.8025-2/4 MCH3431 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 5 7 0.1 23 5 7 1.0 23 5 7 10 IT07570 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A 75 °C 0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4 0.001 0.2 0.5 0.6 25 °C -2 5 0.7 0.8 °C 25 Ta = °C = Ta -- °C 25 75 °C 1.0 7 5 3 2 0.9 1.0 1.1 Drain Current, ID -- A 1000 7 5 SW Time -- ID VDD=15V VGS=4V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V IT07571 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT07572 td(off) tf 100 7 5 3 2 0 2 4 6 8 10 12 14 16 18 20 tr Coss Crss td(on) Drain Current, ID -- A 4.5 4.0 3.5 Drain-to-Source Voltage, VDS -- V 3 2 10 7 5 IT07573 VGS -- Qg VDS=10V ID=3.5A Drain Current, ID -- A ASO IDP=14A ID=3.5A