NTMFS4926NET1G

NTMFS4926NE Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 7.0 mW @ 10 V 30 V 44 A 12.0 mW @ 4.5 V • CPU Power Delivery • DC−DC Converters D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Value Unit VDSS VGS ID 30 ±20 15.5 V V A TA = 100°C Steady State S (1,2,3) TA = 25°C PD 2.70 W TA = 25°C ID 23.4 A TA = 25°C 6.13 TA = 25°C PD 0.92 W TC = 25°C ID 44 A TC = 25°C PD 21.6 W TA = 25°C, tp = 10 ms IDM 182 A IDmax TJ, TSTG 100 −55 to +150 A °C IS dV/dt EAS 21 6.0 22 A V/ns mJ TL 260 °C TA = 100°C TA = 25°C Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 21 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A 5.7 TC =100°C Current Limited by Package Operating Junction and Storage Temperature 28 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 1 MARKING DIAGRAM D W 9.0 Power Dissipation RqJC (Note 1) N−CHANNEL MOSFET 14.8 PD ID TA = 25°C G (4) 9.8 TA = 100°C Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Pulsed Drain Current TA = 25°C Symbol 1 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G 4926NE AYWZZ D D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† NTMFS4926NET1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4926NET3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4926NE/D NTMFS4926NE THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 5.8 Junction−to−Ambient – Steady State (Note 3) RqJA 46.3 Junction−to−Ambient – Steady State (Note 4) RqJA 136.2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 20.4 Junction−to−Top RqJT 10.5 Unit °C/W °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 25 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.6 3.8 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 4.8 ID = 15 A 4.8 ID = 30 A 7.8 ID = 15 A 7.5 VDS = 1.5 V, ID = 15 A 40 mV/°C 7.0 12 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 119 Total Gate Charge QG(TOT) 8.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 1004 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 390 1.4 3.0 pF nC 3.5 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 17.3 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 8.6 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 36.9 14.7 5.5 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4926NE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 6.6 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 31.8 ns 18.3 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.87 TJ = 125°C 0.76 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.1 V 21.9 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 11.0 ns 10.9 QRR 8.0 nC Source Inductance LS 1.00 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 1.0 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 2.2 W NTMFS4926NE TYPICAL CHARACTERISTICS 100 10 V 90 4.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 70 3.6 V 60 50 3.2 V 40 30 VGS = 2.8 V 20 0 1 2 3 4 30 20 1 2 3 4 5 0.006 4 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.009 0.008 0.007 0.016 0.015 0.014 0.013 T = 25°C 0.012 0.011 0.010 VGS = 4.5 V 0.009 0.008 0.007 0.006 0.005 0.004 VGS = 10 V 10 20 30 50 40 60 70 80 90 100 VGS (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.7 ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 50 40 Figure 1. On−Region Characteristics 0.010 1.5 TJ = 125°C VDS = 10 V 60 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A 1.6 TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.013 0.012 0.011 3 80 70 10 0 5 0.015 0.014 0.005 0.004 0.003 TJ = −55°C 90 80 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 100 TJ = 25°C 4.5 V 1.4 1.3 1.2 1.1 1.0 0.9 1,000 TJ = 125°C 100 TJ = 85°C 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 10 VGS = 0 V 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4926NE TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 1200 VGS, GATE−TO−SOURCE VOLTAGE (V) 1400 TJ = 25°C VGS = 0 V Ciss 1000 800 600 Coss 400 Crss 200 0 0 5 10 15 20 25 30 5 Qgs 4 Qgd TJ = 25°C 3 VGS = 10 V VDD = 15 V ID = 30 A 2 1 0 0 2 4 6 8 10 12 14 18 16 30 IS, SOURCE CURRENT (A) VGS = 0 V td(off) tf tr td(on) 1 10 25 20 15 10 TJ = 25°C TJ = 125°C 5 0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 10 ms 10 100 ms 1 1 ms 10 ms 0 V < VGS < 10 V Single Pulse TC = 25°C dc RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 ID, DRAIN CURRENT (A) 8 7 Figure 7. Capacitance Variation 100 0.01 9 Qg, TOTAL GATE CHARGE (nC) VGS = 10 V VDD = 15 V ID = 15 A 0.1 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 11 10 100 22 ID = 21 A 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4926NE TYPICAL CHARACTERISTICS 100 D = 0.5 r(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (ms) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 NTMFS4926NE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE G 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.10 C SIDE VIEW SOLDERING FOOTPRINT* DETAIL A 3X 8X 0.10 C A B 0.05 c 4X e/2 1 4 0.965 K G 0.750 1.000 L PIN 5 (EXPOSED PAD) 4X 1.270 b MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 1.330 2X 0.905 2X E2 L1 M 0.495 4.530 3.200 0.475 D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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