2N6077

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For horizontal deflection output stages of TV’s and CRT’s PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6077 VCBO Collector-base voltage 2N6078 2N6079 2N6077 VCEO Collector-emitter voltage 2N6078 2N6079 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 300 275 375 275 250 350 6 7 45 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.28 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6077 2N6078 2N6079 SYMBOL CONDITIONS MIN TYP. MAX UNIT 2N6077 VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 275 V 2N6078 250 2N6079 350 VCEsat VBEsat ICEO ICEX ICBO IEBO hFE fT Collector-emitter saturation voltage IC=5A; IB=0.5A IC=5A; IB=0.5A VCE= Rated VCEO; IB=0 VCE=Rated VCEO; VBE(off)=1.5V TC=125 VCB=Rated VCBO; IE=0 VEB=6V; IC=0 IC=1.2A ; VCE=1V IC=0.5A;VCE=10V;f=1MHz 12 1.0 V Base-emitter saturation voltage 1.2 V Collector cut-off current 2.0 0.1 1.0 0.1 mA Collector cut-off current mA Collector cut-off current mA Emitter cut-off current 1.0 mA DC current gain 70 Transition frequency 7 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6077 2N6078 2N6079 Fig.2 outline dimensions 3