2SC2579

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION ·With TO-3PN package ·High power dissipation ·High current capability APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 160 6 8 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2579 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency CONDITIONS IC=5mA; IE=0 IC=10mA ;RBE=9 IE=5mA ; IC=0 VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=5A ; IB=0.5A IC=0.5A ; VCE=10V 20 50 2.0 V MHz MIN 160 160 6 0.1 0.1 TYP. MAX UNIT V V V mA mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2579 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3