2SC3039

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3039 DESCRIPTION ·With TO-220C package ·High breakdown voltage (VCBO 500V). ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 50 150 -50~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 14 3 1.75 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE=; IC=1mA; IE=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V ;IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V IC=0.8A ; VCE=10V f=1MHz ; VCB=10V 15 8 20 80 MIN 400 500 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob 2SC3039 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V µA µA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5A, IB1=1A IB2=-1A; VCC=200V RL=40C 1.0 2.5 1.0 µs µs µs hFE-1 classifications L 15-30 M 20-40 N 30-50 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3039 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3039 4