2SD1651

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1651 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 60 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD1651 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE fT Collector-emitter sustaining voltage IC=0.1A , IB=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=800V; IE=0 VCES=1500V; RBE=> VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IF=5A 800 V Collector-emitter saturation voltage 3.0 5.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 10 µA Collector cut-off current 1.0 mA Emitter cut-off current 40 130 mA DC current gain 8 Transition frequency 3 MHz VF Diode forward voltage 2.0 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1651 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3