SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220F package ·Complement to type 2SB1136 ·Low collector saturation voltage ·Wide safe operating area APPLICATIONS ·For relay drivers,high-speed inverters, converters,and other general high-current switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SD1669
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 12 15 2 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=8 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A ;IB=0.6A VCB=40V ;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 50 60 6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT
2SD1669
TYP.
MAX
UNIT V V V
0.4 100 100 280
V µA µA
10
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A;IB1=-IB2=0.2A VCC=20V;RL=4B 0.10 1.20 0.05 µs µs µs
hFE-1 Classifications Q 70-140 R 100-200 S 140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1669
Fig.2 Outline dimensions
3
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