2SD2089

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2089 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Small screen color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation Tc=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 1 3.5 W V A A UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD2089 SYMBOL TYP. MAX UNIT V(BR)EBO VCEsat VBEsat ICBO hFE fT COB Emitter-base breakdown voltage IE=200mA , IC=0 IC=2.2A; IB=0.7A IC=2.2A; IB=0.7A VCB=500V; IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=2.2A 5 V Collector-emitter saturation voltage 0.3 1.0 V Base-emitter saturation voltage 0.85 1.0 V Collector cut-off current 10 µA DC current gain 9 18 Transition frequency 3 MHz Collector output capacitance 95 pF VF tf Diode forward voltage 1.2 1.5 V Fall time ICP=2.2A ;IB1(end)=0.7A 0.2 0.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2089 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3