2SD2401

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2401 DESCRIPTION ·With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, series regulator and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 150 5 12 1 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=30mA; IB=0 IC=7 A;IB=7m A IC=7 A;IB=7m A VCB=160V; IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IC=2A ; VCE=12V IE=0; VCB=10V;f=1MHz 5000 55 95 MIN 150 2SD2401 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2.5 3.0 100 100 V V µA µA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;RL=10C IB1=- IB2=7mA VCC=70V 0.5 10.0 1.1 µs µs µs hFE classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2401 Fig.2 Outline dimensions 3