BD242B

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C DESCRIPTION ·With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD242 VCBO Collector-base voltage BD242A BD242B BD242C BD242 VCEO Collector-emitter voltage BD242A BD242B BD242C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD242 BD242A IC=30mA; IB=0 BD242B BD242C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD242/A ICEO Collector cut-off current BD242B/C BD242 BD242A ICES Collector cut-off current BD242B BD242C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 25 10 -1 mA VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 mA IC=-3A;IB=-0.6 A IC=-3A ; VCE=-4V VCE=-30V; IB=0 -0.3 mA -80 -100 -1.2 -1.8 V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD242/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3