BD242B

BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CER V CEO V EBO IC I CM IB P tot P tot T stg Tj Collector-Base Voltage (R BE = 1 00 Ω ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 o C Total Dissipation at T amb ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature BD241A BD242A 70 60 Value BD241B BD242B 90 80 5 3 5 1 40 2 -65 to 150 150 BD241C BD242C 115 100 V V V A A A W W o o Unit C C For PNP types voltage and current values are negative. June 1997 1/4 BD241A/B/C/BD242A/B/C THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.13 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = r ated V CEO for B D241A/BD242A for B D241B/BD242B for B D241C/BD242C V EB = 5 V I C = 3 0 mA for B D241A/BD242A for B D241B/BD242B for B D241C/BD242C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0 .5 A I C = 0 .5 A I B = 0.6 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 1 0 V V CE = 1 0 V f = 1MHz f = 1KHz 25 10 3 20 V CE = 30 V V CE = 60 V V CE = 60 V Min. Typ. Max. 0.2 0.3 0.3 0.3 1 Unit mA mA mA mA mA I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage 60 80 100 1.2 1.8 V V V V V V CE(sat) ∗ V BE ∗ h FE ∗ hfe Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP types voltage and current values are negative. For the characteristics curves see TIP31/TIP32 series. 2/4 BD241A/B/C/BD242A/B/C TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 3/4 BD241A/B/C/BD242A/B/C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4