BU1706AX

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU1706AX DESCRIPTION ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For use in high frequency electronic lighting ballast applications. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current (peak) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1750 850 7.5 5 8 3 5 32 150 -40~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU1706AX CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=100mA ;IB=0;L=25mH IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCE=rated;VBE=0 Tj=125 VEB=12V; IC=0 IC=5mA ; VCE=10V IC=0.4A ; VCE=3V IC=1.5A ; VCE=1V 8 12 5 18 7 35 MIN 750 1.0 1.3 1.0 2.0 1.0 TYP. MAX UNIT V V V mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 hFE-3 Switching times ton ts tf Turn-on time Storage time Fall time IC=1.5A ;IB1=-IB2=0.3A 1.1 5.0 0.75 1.5 6.5 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU1706AX Fig.2 Outline dimensions 3