BU2520DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520DF DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current-peak Base Collector current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE 1500 800 10 25 6 9 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2520DF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A VCE=BVCES; VBE=0 TC=125 VEB=7.5V; IC=0 100 1.1 1.0 2.0 300 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1.0A ; VCE=5V 13 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 9.5 VF Diode forward voltage IF=6A 2.2 V CC Collector capacitance f=1MHz;VCB=10V 115 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3