BU2725DX

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2725DX DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of color TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1700 800 7.5 12 30 12 20 45 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2725DX SYMBOL TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.75 A 1.0 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.75 A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 0.78 0.86 0.95 1.0 2.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current 110 mA hFE-1 DC current gain IC=1A ; VCE=5V 19 hFE-2 DC current gain IC=7A ; VCE=1V 3.8 7.8 VF Diode forward voltage IF=7A 2.2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2725DX Fig.2 Outline dimensions 3