SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508DX
DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 700 8 15 4 6 45 150 -65~150 UNIT V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage Transition frequency Output capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IC=4.5A ;IB=1.6A IC=4.5A ;IB=1.6A VCE=1500V, VBE=0 Tj=125 VEB=5.0V; IC=0 IC=0.5A ; VCE=5V IF=4.5A IE=0.1A ; VCE=5V VCB=10V;IE=0;f=1.0MHz 10 MIN 700
BU508DX
SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE VF fT COB
TYP.
MAX
UNIT V
1.0 1.3 1.0 2.0 300 30 1.6 7 125 2.0
V V mA mA
V MHz pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU508DX
Fig.2 Outline dimensions
3
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