2N7002W

Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET RoHS Compliant Product 2N7002W A suffix of "-C" specifies halogen & lead-free N–Channel SOT–323 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID IDM Value 60 60 ±115 ±75 ±800 Unit Vdc Vdc mAdc N–Channel VGS VGSM ±20 ±40 Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RθJA TJ, Tstg 417 –55 to +150 °C/W °C Unit mW mW/°C °C/W mW mW/°C 3 1 2 2 RθJA PD SOT–323 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 2 Gate Source SOT-323 Dim A B C D G H J K L S V Min 1.800 1.150 K72 , 702 = Device Code Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 D H K J C V 1 3 2 A L 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 BS G All Dimension in mm http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. A Page 1 of 3 Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET 2N7002W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = –20 Vdc) TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR 60 – – – – – – – – – – 1.0 500 100 –100 Vdc µAdc nAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) VGS(th) ID(on) VDS(on) – – rDS(on) – – – – gFS 80 – – – – – 7.5 13.5 7.5 13.5 – mmhos – – 3.75 0.375 Ohms 1.0 500 – – 2.5 – Vdc mA Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss – – – – – – 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, Vdc, 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) td(on) td(off) – – – – 20 40 ns ns BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. VSD IS ISM – – – – – – –1.5 –115 –800 Vdc mAdc mAdc http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. A Page 2 of 3 2N7002W Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25°C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 0.8 0.6 0.4 0.2 1.0 VDS = 10 V -55°C 125°C 25°C Figure 1. Ohmic Region Figure 2. Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (°C) +100 +140 VGS = 10 V ID = 200 mA 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (°C) +100 +140 VDS = VGS ID = 1.0 mA Figure 3. Temperature versus Static Drain–Source On–Resistance Figure 4. Temperature versus Gate Threshold Voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. A Page 3 of 3