2SA1015K

2SA1015K Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors SOT-23 Dim Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 FEATURES A B ) . Power Dissipation . Collector Current ICM: -0.15 A PCM: 0.2 W ( Ta = 25 C A L 3 1 3 D G H BS 2 . Collector-Base Voltage V(BR)CBO: -50 V 1 2 Top View J K L S V G C D H K J 1.BASE 2.EMITTER 3.COLLECTOR V All Dimension in mm ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 ) TYPE NUMBER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Operating and Storage Junction Temperature Range SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE(sat) fT TJ, TSTG TEST CONDITIONS IC = -100 µA, IE = 0 A IC = -0.1 mA, IB = 0 A IE = -10 µA, IC = 0 A VCB = -50 V, IE = 0 A VCE = -50 V, IB = 0 A VEB = -5 V, IC = 0 A VCE = -6 V, IC = -2 mA IC = -100 mA, IB = -10 mA IC = -100 mA, IB = -10 mA VCE = 10 V, IC = 1 mA, f = 30 MHz Min. -50 -50 -5 130 80 Typ. - 55 ~ +150 Max. -0.1 -0.1 -0.1 400 -0.3 -1.1 UNIT V V V µA µA µA V V MHz hFE VALUES ARE CLASSIFIED AS FOLLOWS: Rank hFE Marking: BA L 130 ~ 200 H 200 ~ 400 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SC1015K Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2