B772

B772 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors TO-126 Features * Low speed switching 10.8±0.2 O 3.1± 0.1 7.6±0.2 1.3±0.2 4.0±0.1 2.7±0.2 MAXIMUM RATINGS* TA=25 C unless otherwise noted o 1 2 3 2.2±0.1 1.27±0.1 15.5±0.2 0 . 7 6 ±0. 1 Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature Value -40 -30 -6 -3 1.25 150 -55-150 Units V V V A W o 2.29 Typ. 4.58±0.1 0.5±0.1 C C o 1: Emitter 2: Collector 3: Base D ime ns ions in Millime te rs ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE（1） VCE(sat) VBE(sat) unless Test otherwise specified） TYP MAX UNIT V V V -1 -10 -1 60 400 -0.5 -1.5 80 V V MHz μA μA μA -40 -30 -6 conditions IB=0 MIN Ic=-100μA ，IE=0 IC= -10 mA , IE= -100 μA，IC=0 VCB= -40 V , IE=0 VCE=-30 V , IB=0 VEB=-6V , IC=0 VCE= -2V, IC= -1A IC=-2A, IC=-2A, IB= -0.2A IB= -0.2A IC=-0.1A fT VCE= -5V, f = 10MHz CLASSIFICATION OF hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 http://www.SeCoSGmbH.com/ 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 2 B772 Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors Typical Characteristics 1 000 -2.0 VCE = -2V IC[A], COLLECTOR CURRENT -1.6 -1.2 IB = -8mA IB = -7mA IB = -6mA IB = -5mA hFE, DC CURRENT GAIN IB = -10mA IB = -9mA 100 -0.8 IB = -4mA IB = -3mA IB = -2mA IB = -1mA 0 -4 -8 -12 -16 -20 10 -0.4 1 -1 - 10 - 100 - 1000 - 1000 0 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[m A], CO LLECTO R CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE - 10000 I C = 1 0· I B 1000 IE = 0 f=1MHz - 1000 VBE(sat) - 100 Cob[pF], CAPACITANCE - 100 - 1000 - 10000 100 10 -10 VCE(sat) -1 -1 - 10 1 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 VCE =5V -10 IC MAX(Pulse) 10 ms Dis Lim sipat ite ion d 1m s s 0u 10 100 IC[A], COLLECTOR CURRENT IC MAX(DC) -1 s/b Lim ite d -0.1 10 VCEOMAX 1 -0.0 1 -0 .1 -1 -0.01 -1 -10 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area http://www.SeCoSGmbH.com/ 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 2of 2