BAV74

BAV74 Elektronische Bauelemente RoHS Compliant Product Surface Mount Switching Diode FEATURES A suffix of "-C" specifies halogen & lead-free A L 3 1 · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance ANODE 3 1 2 Top View 2 BS V G C D H K J 1 3 CATHODE 2 ANODE MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current, T=1s T=1ms T=1us IFM(surge) Symbol VR IF Value 50 200 0.5 1 4 Adc Unit Vdc mAdc SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C H J K L S V All Dimension in mm DEVICE MARKING BAV74 = JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 5 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω 1. FR– 5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. V(BR) IR — — CD — 100 0.1 2.0 pF 50 — Vdc µAdc VF — 1 Vdc trr — 4.0 ns http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BAV74 Elektronische Bauelemente Surface Mount Switching Diode 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes VR Input Signal 90% IR IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) IF 0.1 µF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit Curves Applicable to Each Anode 100 TA = 85°C IF, Forward Current (mA) 10 TA = – 40°C IR , Reverse Current (µA) 10 TA = 150°C 1.0 TA = 125°C 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 1.2 0.001 0 10 20 30 VR, Reverse Voltage (V) 40 50 Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 102 CD, Diode Capacitance (pF) 0.9 10 0.8 IFSM (A) 1 0.7 10-10 0 2 4 VR, Reverse Voltage (V) 6 8 0.6 1 10 102 tp(uS) 103 104 Figure 4. Capacitance Figure 5. Forward Surge http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2