BCP669A

BCP669A Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 1 W, 1.5 A, 180 V NPN Epitaxial Planar Transistor SOT-89 FEATURE 4 The BCP669A is designed for low frequency power amplifier. 1 A E C 2 3 B F G H J D K L REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage DC Collector Current Pulse Collector Current Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC IC PD TJ, TSTG RATING 180 160 5 1.5 3 1 150, -55~150 UNIT V V V A A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage DC Current Gain DC Current Gain Transition Frequency Collector Output Capacitance * Pulse Test: Pulse Width≦380µs, Duty Cycle≦2% SYMBOL BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE1 hFE2 fT Cob MIN 180 160 5 60 30 - TYP 140 14 M AX 10 1 1.5 200 - UNIT V V V µA V V TEST CONDITION IC=1mA, IE = 0A IC=10mA, IB = 0A IE=1mA, IC = 0A VCB=160 V, IE = 0 A IC=600mA, IB=50mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCE=5V, IC=500mA MHz pF VCE = 5V, IC = 10mA, f = 100 MHz VCB = 10V, f=1MHz CLASSIFICATION OF hFE Rank B 60~120 C 100~200 hFE1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Feb-2010 Rev. B Page 1 of 2 BCP669A Elektronische Bauelemente 1 W, 1.5 A, 180 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Feb-2010 Rev. B Page 2 of 2