CZD1225

CZD1225 Elektronische Bauelemente PNP Epitaxial Planar Silicon Transistor DESCRIPTION The CZD1225 is designed for power amplifier and driver stage amplifier applications. D-Pack (TO-252) FEATURES   High transition frequency：fT = 100MHz (typ.) Complements to CZD2983 A B C D GE K M J HF N O P MARKING 1225  1 Collector  REF. Date Code  Base  Emitter A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation (TA=25°C) Total Device Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Ratings -160 -160 -5 -1.5 -0.3 1 15 150 -55 ~ 150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage *DC current gain Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO *VCE(sat) *VBE(on) *hFE fT COB Min. -160 -160 -5 70 - Typ. 100 30 Max. -1 -1 -1.5 -1.0 240 - Unit V V V A A V V MHz pF Test Conditions IC=-1mA, IE=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCB=-160V, IE=0 VEB=-5V, IC=0 IC=-500mA, IB=-50mA VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.1A VCE=-10V, IE=-0.1A, VCB=-10V, IE=0, f=1MHz *Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2% CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ O 70 ~ 140 Y 120 ~ 240 Any changes of specification will not be informed individually. 15-Apr-2010 Rev. A Page 1 of 2 CZD1225 Elektronische Bauelemente PNP Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Apr-2010 Rev. A Page 2 of 2