CZD5706

CZD5706 Elektronische Bauelemente 5 A, 80 V NPN Epitaxial Silicon Transistor DESCRIPTION The CZD5706 is designed for high current switching application. D-Pack (TO-252) FEATURES ♦ ♦ ♦ ♦ Large Current Capacitance Low Collector to Emitter Saturation Voltage High-Speed Switching High Allowable Power Dissipation Collector MARKING 2 5706 A B C D Date Code 1 Base GE 1 B C E 3 Emitter K HF N O P M J SWITCHING TIME TEST CIRCUIT REF. A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.20 2.40 0.40 0.60 6.40 7.35 2.20 3.00 5.40 5.80 0.60 1.20 REF. J K L M N O P Millimeter Min. Max. 2.30 TYP. 0.70 0.90 0.50 0.70 0.60 1.00 1.40 1.78 0.00 1.27 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Total Power Dissipation (TA=25° C) Total Power Dissipation (TC=25° C) Junction, Storage Temperature SYMBOL VCBO VCES VCEO VEBO IC ICP IB PD PD TJ, TSTG RATING 80 80 50 6 5 7.5 1.2 0.8 15 150, -55~150 UNIT V V V V A A A W W ° C ElECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain Transition Frequency Output Capacitance Turn-On Time Storage Time Fall Time SYMBOL BVCBO BVCES BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT COB TON TSTG TF MIN. 80 80 50 6 200 - TYP. 400 15 35 300 20 MAX. 1 1 135 240 1.2 560 - UNIT V V V V µA µA mV mV V MHz pF nS nS nS IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz See specified test circuit. See specified test circuit. See specified test circuit. TEST CONDITIONS 01-June-2009 Rev. A Page 1 of 3 CZD5706 Elektronische Bauelemente 5 A, 80 V NPN Epitaxial Silicon Transistor CHARACTERISTIC CURVES 01-June-2009 Rev. A Page 2 of 3 CZD5706 Elektronische Bauelemente 5 A, 80 V NPN Epitaxial Silicon Transistor CHARACTERISTIC CURVES 01-June-2009 Rev. A Page 3 of 3