SMG2302

SMG2302 3.2A, 20V,RDS(ON) 85mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG2302 provide the designer with the best Combination of fast switching, low on-resistance S 2 L 3 Top View B 1 B C D and cost-effectiveness. G D G H C J K J K L Features * Capable of 2.5V gate drive * Small package outline H Drain Gate Source S D All Dimension in mm Marking : 2302 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 ±12 3.2 2.6 10 1.38 0.01 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2302 Elektronische Bauelemente 3.2A, 20V,RDS(ON) 85mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C ,ID=1mA VDS=VGS, ID=250uA VGS=± 12V VDS=20V,VGS=0 VDS=20V,VGS=0 VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A o 0.1 _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 ±100 1 10 85 115 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50 6 nC ID=3.6A VDS=10V VGS=4.5V _ _ _ _ VDD=10V ID=3.6A nS VGS=5V RG=6Ω RD=2.8Ω _ _ _ pF VGS=0V VDS=10V f=1.0MHz _ _ S VDS=5V, ID=3.6A Source-Drain Diode Parameter Forward On Voltage 2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Symbol VSD Is ISM Min. _ _ Typ. _ _ Max. 1.2 1 Unit V Test Condition IS=1.6A, VGS=0V. VD=VG=0V, VS=1.2V G A _ _ 10 A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2302 Elektronische Bauelemente 3.2A, 20V,RDS(ON) 85mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG2302 Elektronische Bauelemente 3.2A, 20V,RDS(ON) 85mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4