SMG2398NE

SMG2398NE Elektronische Bauelemente 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 1 SC-59 A 3 3 L Top View 2 CB 1 2 FEATURES     K E D Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space. F G H J PRODUCT SUMMARY SMG2398NE VDS(V) 60 RDS(on) (m 194@VGS= 10V 273@VGS= 4.5V ID(A) 2.2 1.8 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range PD @ TA=25°C PD @ TA=70°C ID @ TA=25°C ID @ TA=70°C Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum Unit V V A A A A W W °C 60 ±20 2.2 1.7 ±15 1.7 1.3 0.8 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 Notes 1 2 Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t ≦ 5 sec Steady State Symbol RJA Maximum 100 166 Unit °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Nov-2010 Rev. A Page 1 of 2 SMG2398NE Elektronische Bauelemente 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Symbol Min. VGS(th) IGSS 1.0 - Typ. Max. 8 ±100 1 Unit V nA Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= ±20V VDS= 48V, VGS= 0V Zero Gate Voltage Drain Current IDSS 50 194 uA VDS= 48V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 10V VGS= 10V, ID= 2.2A mΩ 273 1.2 S V VGS= 4.5V, ID= 1.8A VDS= 4.5V, ID= 2.2A IS= 1.7A, VGS= 0V On-State Drain Current 1 ID(on) 10 - Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage gfs VSD - DYNAMIC 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time Notes 1 2 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf TRR - 4.0 4.0 2.0 10 10 20 10 50 IF=1.7A, di/dt=100 A / uS nS VDD= 30V, VGEN= 10V, RL= 30, ID= 1A nC VDS= 30V, VGS= 5V, ID= 2.2A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Nov-2010 Rev. A Page 2 of 2