SMG2314NE

SMG2314NE Elektronische Bauelemente 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Miniature SC-59 surface mount package saves board space. High power and current handling capability. MLow side high current DC-DC Converter applications F G H J REF. A B C D E F PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range PD @ TA=25°C PD @ TA=70°C 2 Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C ID IDM IS PD Tj, Tstg Ratings Maximum 20 ±12 4.0 3.1 ±20 1.6 1.3 0.8 -55 ~ 150 Unit V V A A A A W W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 Notes 1 2 Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. Any changes of specification will not be informed individually. Symbol t ≦ 5 sec Steady State Maximum 100 166 Unit °C / W RJA http://www.SeCoSGmbH.com/ 27-Jan-2011 Rev. A Page 1 of 2 SMG2314NE Elektronische Bauelemente 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Symbol Min. VGS(th) IGSS 0.7 - Typ. Max. 11.3 0.75 ±100 1 Unit V nA Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= ±8V VDS= 16V, VGS= 0V Zero Gate Voltage Drain Current IDSS 10 32 uA VDS= 16V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 4.5V VGS= 4.5V, ID= 4.6A mΩ 44 S V VGS= 2.5V, ID= 3.9A VDS= 10V, ID= 4.0A IS= 1.6A, VGS= 0V On-State Drain Current 1 ID(on) 10 - Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage gfs VSD - Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time Notes 1 2 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf Trr - 13.4 0.9 2.0 8 24 35 10 40 IF=1.6A, di/dt =100 A/uS nS VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A nC VDS= 10V, VGS= 4.5V, ID= 4.0A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jan-2011 Rev. A Page 2 of 2