SSM9973

SSM9973 Elektronische Bauelemente 3.9A, 60V,RDS(ON) 80mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product S OT -223 ０ Description The MMS9973 Provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 Package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application such as DC/DC conerters. G D S Features * Simple Drive Requirement * Low Gate Charge D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 60 ±20 3.9 2.5 20 2.7 0.02 ＋０．１５ －０．２５ Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 45 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSM9973 Elektronische Bauelemente 3.9A, 60V,RDS(ON) 80mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 60 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C ,ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=3.9A VGS=4.5V, ID=2A o 0.06 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 1 25 80 100 13 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 8 2 4 8 4 20 6 700 80 50 3.5 nC ID=3.9A VDS=48V VGS=4.5V _ _ _ _ 1120 _ _ VDD=30V ID=1A nS VGS=10V RG=3.3 Ω RD=30 Ω pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=3.9A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VDS Trr 2 Min. _ _ _ Typ. _ Max. 1.2 _ _ Unit V Test Condition IS=3.9A, VGS=0V. Is=3.9A, VGS=0V dl/dt=100A/us Reverse Recovery Time Reverse Recovery Charge 28 35 ns nC Qrr Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3. Surface mounted on 1 inch2 copper pad of FR4 board; 135 °C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSM9973 Elektronische Bauelemente 3.9A, 60V,RDS(ON) 80mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSM9973 Elektronische Bauelemente 3.9A, 60V,RDS(ON) 80mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4