SSRF90N06-10

SSRF90N06-10 Elektronische Bauelemente 90A, 60V, RDS(ON) 9.9mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ITO-220 B N D E FEATURES   M A   Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe ITO-220 saves board space. Fast switching speed. High performance trench technology. H J K L C G F L PRODUCT SUMMARY VDS(V) 60 SSRF90N06-10 RDS(on) (m 9.9@VGS= 10V 13@VGS= 4.5V ID(A) REF. Dimensions in millimeters 90 1 A B C D E F G Millimeter Min. Max. 15.00 15.60 9.50 10.50 13.00 Min 4.30 4.70 2.50 3.10 2.40 2.80 0.30 0.70 REF. H J K L M N Millimeter Min. Max. 3.00 3.80 0.90 1.50 0.50 0.90 2.34 2.74 2.50 2.90  3.1 3.4  Drain  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 UNIT V V A A A W °C °C / W °C / W VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC 1 60 ±20 90 240 90 300 -55 ~ 175 62.5 0.5 Continuous Source Current (Diode Conduction) Total Power Dissipation Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case Notes： 1 Package Limited. 2 Pulse width limited by maximum junction temperature. THERMAL RESISTANCE RATINGS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Nov-2010 Rev.A Page 1 of 2 SSRF90N06-10 Elektronische Bauelemente 90A, 60V, RDS(ON) 9.9mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage SYMBO MIN. TYP. MAX. UNIT Static VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 1 120 30 1.1 4 ±100 1 25 9.9 13 V nA μA A mΩ S V TEST CONDITIONS VDS= VGS, ID = 250 μA VDS = 0V, VGS= 20V VDS= 48V, VGS= 0V VDS= 48V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 10V VGS= 10V, ID= 30 A VGS= 4.5V, ID= 20 A VDS= 15V, ID= 30 A IS= 34 A, VGS= 0 V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 49 9.0 10 16 10 50 23 nS VDD= 25 V ID= 34 A VGEN = 10 V RL= 25  nC VDS = 15 V VGS = 4.5 V ID = 90 A Notes 1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Nov-2010 Rev.A Page 2 of 2