STT8205S

STT8205S Elektronische Bauelemente 6 A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercialindustrial surface mount applications. Features * Low Drive Current * Low On-Resistance * Capable of 2.5V Gate Drive D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 8205S G1 G2 1 G1 2 S2 3 G2 S1 S2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 ±8 6 4.8 20 1.14 0.01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 110 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT8205S Elektronische Bauelemente 6 A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ oC V uA uA uA Test Condition VGS=0V, ID= 250uA Reference to 25oC ,ID= 1mA VDS=VGS, ID= 250uA VGS=± 8V VDS=20V,VGS=0 VDS= 16V,VGS=0 VGS=4.5 V, ID= 6 A 0.03 _ _ _ _ 0.5 _ _ _ _ 1.5 ± 100 1 25 28 _ _ 23 4.5 7 30 70 40 65 1035 320 150 20 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ 38 _ _ _ _ _ _ _ _ _ _ VGS= 2.5V, ID=5.2 A Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=6 A VDS= 20V VGS= 5V VDD= 10V ID= 1 A nS VGS=5 V RG=6 Ω RD=10 Ω pF VGS=0V VDS= 20V f=1.0MHz _ _ S VDS=10 V, ID=6 A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VS D Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.7 A , VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 in copper pad of FR4 board; 180 OC/W when mounted on min. copper pad. 2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 STT8205S Elektronische Bauelemente 6 A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 STT8205S Elektronische Bauelemente 6 A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 180 /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 o f 4