STT8205S_11

STT8205S Elektronische Bauelemente 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The STT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. A E 6 5 4 TSOP-6 L FEATURES    B Low on-resistance Capable of 2.5V gate drive Low drive current F DG 1 2 3 C K H J MARKING CODE REF. 8205S    = Date Code A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch G S G D S D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Power Dissipation Maximum Junction to Ambient Linear Derating Factor Operating Junction & Storage Temperature Range TJ, TSTG 3 Symbol VDS VGS VGS=4.5V, TA = 25°C VGS=4.5V, TA = 70°C ID IDM PD RθJA Ratings 20 ±10 6 4.8 20 1.14 110 0.01 -55~150 Unit V V A A W °C / W W / °C °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 1 of 4 STT8205S Elektronische Bauelemente 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate-Threshold Voltage Forward Transfer Conductance Gate-Body Leakage Zero Gate Voltage Drain Current Tj =25°C Tj =75°C Symbol BVDSS △BVDS/△Tj VGS(th) Gfs IGSS IDSS Min. 20 0.5 - Typ. Static 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 1.5 ±100 1 25 28 38 - Unit V V / °C V S nA μA μA mΩ Test condition VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VDS=10V, ID=6A VGS=±10V VDS=16V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A ID=6A VDS=20V VGS=5V VDS=10V ID=1A VGS=5V RG=6Ω RD=10Ω VGS=0 VDS=20V f=1.0MHz Drain-Source On-Resistance 2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC nS pF Source-Drain Diode Forward On Voltage 2 VDS 1.2 V IS=1.7A, VGS=0 Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300us, duty cycle≦2%. 2 3 Surface mounted on 1 in copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 2 of 4 STT8205S Elektronische Bauelemente 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 3 of 4 STT8205S Elektronische Bauelemente 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Mar-2011 Rev. B Page 4 of 4