BSS71

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 • • • High Voltage Hermetic TO-18 Metal package. Ideally suited for High Voltage Amplifier and Switching Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 200V 200V 6V 500mA 500mW 2.86mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Min. Typ. Max. 350 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8576 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Test Conditions IC = 10mA IC = 100µA IE = 100µA VCB = 150V VCE = 150V VEB = 5V IC = 0.1mA IB = 0 IE = 0 IC = 0 IE = 0 IB = 0 IC = 0 VCE = 1.0V VCE = 10V VCE = 10V VCE = 10V IB = 1.0mA IB = 3mA IB = 5mA IB = 1.0mA IB = 3mA IB = 5mA Min. 200 200 6 Typ Max. Units V(BR)CBO V(BR)EBO ICBO ICEO IEBO V 50 500 50 20 30 50 40 250 0.3 0.4 0.5 0.8 0.9 1.0 V nA hFE (1) Forward-current transfer ratio IC = 1.0mA IC = 10mA IC = 30mA IC = 10mA VCE(sat) (1) Collector-Emitter Saturation Voltage IC = 30mA IC = 50mA IC = 10mA VBE(sat) (1) Base-Emitter Saturation Voltage IC = 30mA IC = 50mA DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 20mA f = 20MHz Output Capacitance VCB = 20V f = 1.0MHz Input Capacitance VEB = 0.5V f = 1.0MHz Turn-On Time IC = 50mA IB1 = 10mA IC = 50mA VCC = 100V VCC = 100V 100 ns 400 IC = 0 45 IE = 0 3.5 pF VCE = 20V 50 200 MHz Cobo Cibo ton toff Turn-Off Time IB1 = - IB2 = 10mA Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8576 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO-18 (TO-206AA) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) Website: http://www.semelab-tt.com Document Number 8576 Issue 1 Page 3 of 3