BSS123LT1G

BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS(on) = 6 W Features • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant N−Channel 3 MAXIMUM RATINGS Rating Drain−Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous (Note 1) − Pulsed (Note 2) Symbol Value Unit VDSS 100 Vdc VGS VGSM ± 20 ± 40 ID 0.17 0.68 1 Vdc Vpk 2 Adc IDM MARKING DIAGRAM & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Drain 3 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SA MG G 2 Symbol Max Unit PD 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR−5 = 1.0  0.75  0.062 in. SOT−23 CASE 318 STYLE 21 SA M G 1 Gate 2 Source = Device Code = Date Code = Pb−Free Package (*Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 November, 2013 − Rev. 9 1 Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 100 − − Vdc − − − − 15 60 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 mAdc) Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 100 Vdc) TJ = 125°C IDSS Gate−Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS − − 50 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 1.6 − 2.6 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 100 mAdc) rDS(on) − − 6.0 W gfs 80 − − mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 20 − pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − 9.0 − pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − 4.0 − pF td(on) − 20 − ns td(off) − 40 − ns VSD − − 1.3 V mAdc ON CHARACTERISTICS (Note 4) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS(4) Turn−On Delay Time Turn−Off Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50 W) REVERSE DIODE Diode Forward On−Voltage (ID = 0.34 Adc, VGS = 0 Vdc) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† BSS123LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BSS123LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel BVSS123LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS 1.6 1.6 6V 1.0 5V 0.8 4V 0.6 0.4 3V 0.2 VGS, GATE−TO−SOURCE VOLTAGE (V) 0 1 2 4 3 5 6 8 7 9 1.2 1.0 0.8 0.6 TJ = 25°C 0.4 0 10 TJ = 150°C 1 TJ = −55°C 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 50 3.50 3.25 VGS = 4.5 V 3.00 2.75 VGS = 10 V 2.50 2.25 80 100 120 140 160 180 40 30 Ciss 20 Coss 10 0 200 Crss 0 30 40 50 60 70 80 Figure 3. On−Resistance vs. Drain Current and Gate Voltage Figure 4. Capacitance Variation 90 100 1 VGS = 0 V 8 6 QGS TJ = 25°C VGS = 10 V VDS = 30 V ID = 0.2 A QGD 2 0 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QT 4 10 ID, DRAIN CURRENT (mA) 10 6 TJ = 25°C VGS = 0 TJ = 25°C C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS = 10 V 0.2 IS, SOURCE CURRENT (A) ID, DRAIN CURRENT (A) 1.2 1.4 ID, DRAIN CURRENT (A) TJ = 25°C 1.4 VGS = 10 V 8V 0 1 2 3 4 5 6 7 0.1 0.01 0.001 TJ = 125°C 0.0001 8 0 0.2 TJ = 25°C 0.4 TJ = −55°C 0.6 0.8 1.0 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 5. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 6. Diode Forward Voltage vs. Current http://onsemi.com 3 1.2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 1 0 V ≤ VGS ≤ 20 V SINGLE PULSE TA = 25°C TJ = 150°C 100 ms 1 ms 10 ms 0.1 100 ms 0.01 0.001 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 dc 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE Figure 7. Maximum Rated Forward Biased Safe Operating Area 1000 D = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 Single Pulse 0.1 0.00001 0.000001 1 oz. Cu Pad, 5mm thick, 25mm2 area 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 8. Thermal Response http://onsemi.com 4 1 10 100 1000 BSS123LT1G, BVSS123LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BSS123LT1/D