0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BT138F-600

BT138F-600

  • 厂商:

    SEMIWELL

  • 封装:

  • 描述:

    BT138F-600 - Bi-Directional Triode Thyristor - SemiWell Semiconductor

  • 数据手册
  • 价格&库存
BT138F-600 数据手册
SemiWell Semiconductor Bi-Directional Triode Thyristor BT138F-600 UL : E228720 Symbol ○ 2.T2 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) TO-220F ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 58 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms 12 100/110 50 5.0 Over any 20ms period 0.5 2.0 10 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V V °C °C g Jan, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/6 BT138F-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 15 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 10 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 15 ─ Max. 2.0 1.65 25 25 25 1.5 1.5 1.5 ─ ─ ─ 3.7 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/6 BT138F-600 Fig 1. Gate Characteristics 10 2 Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 ℃ 10 0 10 1 TJ = 125 C o IGM (2A) TJ = 25 C 10 0 o 10 -1 VGD (0.2V) 1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 20 18 130 Fig 4. On State Current vs. Allowable Case Temperature Allowable Case Temperature [ oC] o o o π θ θ = 180 2π 120 110 100 90 Power Dissipation [W] 16 14 12 10 8 6 4 2 0 0 θ 360° θ = 150 θ = 120 o θ = 90 θ = 60 θ = 30 o o θ : Conduction Angle θ = 30 π θ 2π o o o 80 70 60 50 θ = 60 θ θ θ θ 7 8 9 10 11 12 θ 360° θ : Conduction Angle = 90 o = 120 o = 150 o = 180 13 14 15 3 6 9 12 15 0 1 2 3 4 5 6 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 120 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 100 Surge On-State Current [A] 80 o 60Hz 60 VGT (25 C) VGT (t C) o 1 40 50Hz 20 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/6 BT138F-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig 8. Transient Thermal Impedance 1 I I + GT1 _ GT1 Transient Thermal Impedance [ C/W] IGT (t C) o IGT (25 C) o o 1 I _ GT3 0.1 -50 0 50 100 o 150 0.1 -2 10 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● ▼ ▲ A ● ▼ ▲ A ● 6V 6V A V ● RG V ● RG V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/6 BT138F-600 TO-220F Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059 φ φ1 φ2 F B A E H I φ φ1 φ2 C L 1 D 2 3 J K M G 1. T1 2. T2 3. Gate N O 5/6 BT138F-600 TO-220F Package Dimension, Forming mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O P Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059 φ φ1 φ2 F B A E H I φ φ1 φ2 C L 1 2 3 N J K O P M G D 1. T1 2. T2 3. Gate 6/6
BT138F-600 价格&库存

很抱歉,暂时无法提供与“BT138F-600”相匹配的价格&库存,您可以联系我们找货

免费人工找货