SDW80S600

SemiWell Semiconductor SDW80S600 Fast Soft Recovery Rectifier Diode Features Plastic material meets UL94V-0 ◆ Glass passivated chips ◆ Very short recovery time ◆ Extremely low switching loss ◆ Soft recovery behavior ◆ High ruggedness type ◆ IFAVM = 80A VRRM = 600V = 65ns trr TO- 247AD General Description The SDW80S600 FRD has been designed for applications requiring low forward voltage drop and soft recovery characteristics. Typical applications are output rectification for SMPS, UPS, Welding and freewheeling in inverter, chopper and converter. 1 2 1.Cathode 2. Anode Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM I2 t Ptot TJ/TSTG Parameter Repetitive Peak Reverse Voltage Average Rectified Forward Current @ TC = 82°C Non-Repetitive Peak Surge Current (t=8.3ms) (Surge applied at rated load conditions half sinewave,single phase, 60HZ) I2t for Fusing ( t = 8.3ms ,60Hz sine pulse ) Total Power Dissipation @ TC = 25°C Maximum Junction / Storage Temperature Range Value 600 80 800 2650 270 - 40 ~ 150 Units V A A A W °C Thermal Characteristics Symbol RthJC RthCS RthJA Parameter Maximum Thermal Resistance, Junction-to-Case Typical Thermal Resistance, Case-to-Heatsink Maximum Thermal Resistance, Junction-to-Ambient Value 0.47 0.25 35 Units °C/W °C/W °C/W 1/5 March, 2003. Rev. 01 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. SDW80S600 Electrical Characteristics Symbol Reverse Leakage Current IR Forward Voltage Drop VF rt VF(TO) Forward Slope Resistance, Tj =150°C Threshold Voltage IF = 80A IF = 80 A TC = 25 °C TC = 150 °C - Parameter VR = VRRM TC = 25 °C TC = 150 °C Min - Typ - Max 0.1 14 Units mA 1.5 1.3 - 1.8 1.5 8.0 0.85 V mΩ V Recovery Characteristics Symbol Reverse Recovery Time trr Irr Qrr Parameter ① ② IF = Min - Typ 80 65 Max 130 100 Units ns IF = 40A , VR=30V ,di/dt = -50A/us 1A , VR=30V ,di/dt = -50A/us Reverse Recovery Current IF = 40A , VR=30V ,di/dt = -50A/us Reverse Recovery Charge - - 3.5 0.5 A uC 2/5 SDW80S600 Fig 1. di/dt vs. maximum reverse current (TC=25oC) 20 40 Fig 2. di/dt vs. maximum reverse current (TC=150oC) o TC=25 C IRM, Reverse recovery current[A] 15 o 35 T C=150 C IRM, Reverse recovery current[A] 30 25 20 15 10 5 0 10 IF=40A IF=20A IF=10A IF=1A IF=40A IF=20A IF=10A IF=1A 5 0 0 40 80 120 160 200 0 40 80 120 160 200 di/dt, Rating of decreasing forward current[A/us] di/dt, Rating of decreasing forward current[A/u s] Fig 3. di/dt vs. reverse recovery time (TC=25oC) 200 180 400 Fig 4. di/dt vs. reverse recovery time (TC=150oC) o T C=25 C Trr, Reverse recovery time[ns] 360 320 280 240 200 160 120 80 40 T C=150 C IF=1A IF=10A o Trr, Reverse recovery time[ns] 160 140 120 100 80 60 40 20 0 0 40 IF=20A IF=40A IF=1A IF=10A IF=20A IF=40A 120 160 200 80 0 0 40 80 120 160 200 di/dt, Rating of decreasing forward current[A/u s] di/dt, Rating of decreasing forward current[A/u s] Fig 5. di/dt vs. reverse recovery charge (TC=25oC) 600 Fig 6. di/dt vs. reverse recovery charge (TC=150oC) 3600 3200 T C=25 C Qrr, Reverse recovery charge[nC] o T C=150 C o Qrr, Reverse recovery charge[nC] 500 2800 2400 2000 1600 1200 800 400 0 400 IF=40A IF=20A IF=10A IF=40A IF=20A IF=10A IF=1A 300 200 IF=1A 100 0 0 40 80 120 160 200 0 40 80 120 160 200 di/dt, Rating of decreasing forward current[A/u s] di/dt, Rating of decreasing forward current[A/u s] 3/5 SDW80S600 Fig 7. Forward average current vs. forward voltage drop 300 Fig 8. Reverse leakage current vs. reverse voltage 10 6 10 100 5 TC=150 C 4 o IFAV, Forward current[A] IR, Leakage current[uA] 10 TC=100 C 3 o 10 T C=150 C T C=100 C TC=50 C T C=25 C o o o o 10 10 2 TC=50 C TC=25 C o o 10 1 1 0 .0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 0 0 100 200 300 400 500 600 700 800 V F, Forward voltage drop[V] VR, Reverse voltage[V] Fig 9. Juntion capacitance vs. reverse voltage. TC, Maximum Allowable Case Temperature[ C] 190 180 Fig 10. Maximum allowable case temperature 150 140 Φ CT, Junction Capacitance[pF] o 170 160 150 140 130 120 130 120 110 100 Rthjc = 0.47 C/W o 180 90 80 70 o Freuqency 1[MHz] 0 20 40 60 80 100 0 20 40 60 80 VR, Reverse voltage[V] IFAV, Forward current[A] Fig 11. Maximum power dissipation vs. forward average current 350 300 250 200 150 100 Φ PD, Maximum Power Dissipation[W] 180 o 50 0 Conduction Angle o TJ=150 C 0 20 40 60 80 100 120 140 IFAV, Forward current[A] 4/5 SDW80S600 TO-247 AD Package Dimension mm Min. 15.77 20.80 20.05 4.48 4.27 10.64 4.90 1.90 2.35 0.6 1.93 1.07 3.56 2.13 1.33 3.66 0.076 0.042 0.140 Typ. Max. 16.03 21.10 20.31 4.58 4.37 11.16 5.16 2.06 2.45 Min. 0.621 0.819 0.789 0.176 0.168 0.418 0.193 0.075 0.093 0.024 0.084 0.052 0.144 Inch Typ. Max. 0.631 0.831 0.800 0.180 0.172 0.440 0.203 0.081 0.096 Dim. A B C D E F G H I J K L Φ G A H B D φ I E 1 2 L C 1. Cathode 2. Anode J K F 5/5