PC357N

PC357N Series PC357N Series Mini-flat Package, General Purpose Photocoupler ■ Description ■ Agency approvals/Compliance PC357N Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V(∗) and CTR is 50% to 600% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC357) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Hybrid substrates that require high density mounting 2. Programmable controllers ■ Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 80V(∗)) 4. Current transfer ratio (CTR) : MIN. 50% at IF=5mA, VCE=5V 5. Several CTR ranks available 6. High isolation voltage between input and output (Viso(rms) : 3.75kV) (*) Up to Date code "P9" (September 2002) VCEO : 35V. From the production Date code "J5" (May 1997) to "P9" (September 2002), however the products were screened by BVCEO≥70V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00101EN Date Sep. 30. 2003 © SHARP Corporation PC357N Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) 3.6±0.3 2.54±0.25 4 3 Date code Anode mark 357 4.4±0.2 SHARP mark "S" Rank mark Factory identification mark 1 2 ±0.1 0.4 5.3±0.3 Epoxy resin 0.1±0.1 2.6±0.2 0.2±0.05 45˚ 0.5+0.4 −0.2 6˚ 7.0+0.2 −0.7 Product mass : approx. 0.1g Sheet No.: D2-A00101EN 2 PC357N Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production Rank mark Refer to the Model Line-up table Sheet No.: D2-A00101EN 3 PC357N Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Operating temperature Topr Storage temperature Tstg *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 *4 80 6 50 150 170 −30 to +100 −40 to +125 3.75 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s *4 Up to Date code "P9" (September 2002) VCEO:35V. ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω MIN. − − − − *5 80 6 2.5 − 5×1010 − − − TYP. 1.2 − 30 − − − 5 0.1 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 30 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs *5 From the production Date code "J5" (May 1997) to "P9" (September 2002), however the products were screened by BVCEO≥70V. Sheet No.: D2-A00101EN 4 PC357N Series ■ Model Line-up Taping 3 000pcs/reel 750pcs/reel PC357N PC357NT PC357N1 PC357N1T PC357N2 PC357N2T PC357N3 PC357N3T PC357N4 PC357N4T Model No. PC357N5 PC357N5T PC357N6 PC357N6T PC357N7 PC357N7T PC357N8 PC357N8T PC357N9 PC357N9T PC357N0 PC357N0T Package Rank mark IC [mA] (IF=5mA, VCE=5V, Ta=25˚C) with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D 2.5 to 30.0 4.0 to 8.0 6.5 to 13.0 10.0 to 20.0 15.0 to 30.0 4.0 to 13.0 6.5 to 20.0 10.0 to 30.0 4.0 to 20.0 6.5 to 30.0 4.0 to 30.0 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A00101EN 5 PC357N Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 70 Diode power dissipation P (mW) Forward current IF (mA) 60 50 40 30 20 10 0 −30 0 25 50 75 100 Ambient temperature Ta(˚C) 70 60 40 20 100 300 Total power dissipation Ptot (mW) 150 100 50 0 −30 0 25 50 75 100 Ambient temperature Ta (˚C) 200 170 150 100 50 500 Pulse width≤100µs Ta=25˚C Forward current IF (mA) 1 000 500 200 100 50 25˚C 0˚C 50 −25˚C 20 10 5 2 10 1 5 10− 2 2 Duty ratio 10− 1 2 5 1 50˚C 100 20 5 100 Ta=75˚C 200 2 000 5 10− 3 2 0 25 50 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage 10 000 5 000 250 0 −30 125 Fig.5 Peak Forward Current vs. Duty Ratio 5 0 50 55 Ambient temperature Ta (˚C) Fig.4 Total Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) 80 0 −30 125 Fig.3 Collector Power Dissipation vs. Ambient Temperature Peak forward current IFM (mA) 100 0 0.5 1.0 1.5 2.0 2.5 Forward voltage VF (V) 3.0 3.5 Sheet No.: D2-A00101EN 6 PC357N Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 50 500 Ta=25˚C 40 300 200 1 10 Forward current IF (mA) 2 0 4 6 8 10 80 60 40 0 20 Ambient temperature Ta (˚C) IF=20mA IC=1mA 0.14 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio(%) 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 100 0 20 80 60 40 Ambient temperature Ta (˚C) 100 Fig.12 Response Time vs. Load Resistance 500 VCE=2V 200 IC=2mA Ta=25˚C 100 VCE=50V 10−6 5 −7 10 Response time (µs) Collector dark current ICEO (A) 5mA 0.16 IF=5mA VCE=5V Fig.11 Collector Dark Current vs. Ambient Temperature 5 10−8 5 10−9 5 50 tr 20 tf 10 5 2 1 td ts 0.5 10−10 5 10−11 −30 20 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 50 10−5 5 mA Collector-emitter voltage VCE (V) 100 0 −30 PC(MAX.) 10 0 100 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 150 30 10 100 0 0.1 IF=30mA 20 mA 400 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C 0 20 40 60 80 Ambient temperature Ta (˚C) 0.2 0.1 0.01 100 0.1 1 10 Load resistance RL (kΩ) 50 Sheet No.: D2-A00101EN 7 PC357N Series Fig.13 Test Circuit for Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current 8 VCC Ta=25˚C Input RD RL Collector-emitter saturation voltage VCE (sat) (V) Input Output Output 10% 90% VCE td ts tr tf Please refer to the conditions in Fig.12 7 6 IC=0.5mA 1mA 3mA 5mA 7mA 5 4 3 2 1 0 0 3 12 6 9 Forward current IF (mA) 15 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00101EN 8 PC357N Series ■ Design Considerations ● Design guide While operating at IF